发明授权
US5032541A Method of producing a semiconductor device including a Schottky gate
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制造包括肖特基栅极的半导体器件的方法
- 专利标题： Method of producing a semiconductor device including a Schottky gate
- 专利标题（中）： 制造包括肖特基栅极的半导体器件的方法
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申请号： US396149申请日： 1989-08-21
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公开(公告)号： US5032541A公开(公告)日： 1991-07-16
- 发明人: Shinichi Sakamoto , Takuji Sonoda , Kazuo Hayashi
- 申请人： Shinichi Sakamoto , Takuji Sonoda , Kazuo Hayashi
- 申请人地址： JPX
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX
- 优先权： JPX63-230941 19880914
- 主分类号： H01L29/812
- IPC分类号： H01L29/812 ; C23C18/31 ; H01L21/28 ; H01L21/285 ; H01L21/338
摘要：
A method of producing a semiconductor device includes etching a recessed aperture in a substrate, forming a gate electrode in the aperture, burying the gate electrode with resist, etching the resist to expose the gate electrode, depositing a high conductivity metal on the gate electrode, and forming ohmic electrodes on opposite sides of the gate electrode by a series of processing steps.
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