Invention Grant
- Patent Title: Method of forming fine patterns
- Patent Title (中): 形成精细图案的方法
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Application No.: US553565Application Date: 1990-07-18
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Publication No.: US5037504APublication Date: 1991-08-06
- Inventor: Satoshi Takeuchi
- Applicant: Satoshi Takeuchi
- Applicant Address: JPX
- Assignee: Dai Nippon Insatsu Kabushiki Kaisha
- Current Assignee: Dai Nippon Insatsu Kabushiki Kaisha
- Current Assignee Address: JPX
- Priority: JPX1-192180 19890725; JPX2-102421 19900418
- Main IPC: B41M1/00
- IPC: B41M1/00 ; B41M3/00 ; C23F1/02 ; C25D5/02 ; H05K3/00 ; H05K3/06
Abstract:
A fine pattern is formed by the following steps. A prescribed mask pattern of an electrically insulative material is formed on an electroconductive surface of a base plate of a printing plate, so that the part, other than the mask pattern, of the printing plate becomes an electroconductive printing pattern part. Then, electrolysis is carried out in an electrolyte containing an electrodeposition substance as an ingredient with the printing plate as one electrode and with an opposing electrode, both immersed in the electrolyte, so that the electrodeposition substance is deposited on the electroconductive printing pattern part of the printing plate. Thereafter, the printing plate is withdrawn out from the electrolyte, washed and dried. Then, the deposited substance is transferred onto the surface of a printing object such as a plate of glass or plastic, for forming a pattern thereon. Thereafter, the surface of the printing object is etched with the electrodeposited substance thus transferred as an erosion resistant material. The transfer of the electrodeposition substance without consistency from the printing plate onto the surface of the printing object, followed by etching of the printing object surface, enables an accurate reproduction of a fine pattern on the printing object.
Public/Granted literature
- US6001667A Method of manufacturing a semiconductor detector for detecting light and radiation Public/Granted day:1999-12-14
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