发明授权
US5052339A Radio frequency plasma enhanced chemical vapor deposition process and
reactor
失效
射频等离子体增强化学气相沉积工艺和反应器
- 专利标题: Radio frequency plasma enhanced chemical vapor deposition process and reactor
- 专利标题(中): 射频等离子体增强化学气相沉积工艺和反应器
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申请号: US598500申请日: 1990-10-16
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公开(公告)号: US5052339A公开(公告)日: 1991-10-01
- 发明人: George Vakerlis , Ward D. Halverson , Diwakar Garg , Paul N. Dyer
- 申请人: George Vakerlis , Ward D. Halverson , Diwakar Garg , Paul N. Dyer
- 申请人地址: PA Allentown
- 专利权人: Air Products and Chemicals, Inc.
- 当前专利权人: Air Products and Chemicals, Inc.
- 当前专利权人地址: PA Allentown
- 主分类号: C23C16/44
- IPC分类号: C23C16/44 ; C23C16/455 ; C23C16/509 ; H01J37/32
摘要:
An improved capacitively coupled radio frequency-plasma enhanced chemical vapor deposition (PECVD) apparatus and process are disclosed for depositing a uniform coating of material on substrates. The apparatus includes a secondary electrode defining a reaction zone within an outer chamber and an RF electrode in concert with the secondary electrode for generating a plasma within the reaction zone. The electrode comprising a base and a finger extending through the reaction zone for distributing a plasma field uniformly throughout the reaction zone. The process comprises heating a substrate to a deposition temperature in the range of about 300.degree. to 650.degree. C. Reactant gases are introduced into the PECVD reactor and a coating of about 0.2 to about 20 .mu.m is deposited onto the heated substrate. This low temperature process is particularly adapted to coating three-dimensional objects of metals, metal alloys and mixtures of metals.
公开/授权文献
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