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US5052339A Radio frequency plasma enhanced chemical vapor deposition process and reactor 失效
射频等离子体增强化学气相沉积工艺和反应器

Radio frequency plasma enhanced chemical vapor deposition process and
reactor
摘要:
An improved capacitively coupled radio frequency-plasma enhanced chemical vapor deposition (PECVD) apparatus and process are disclosed for depositing a uniform coating of material on substrates. The apparatus includes a secondary electrode defining a reaction zone within an outer chamber and an RF electrode in concert with the secondary electrode for generating a plasma within the reaction zone. The electrode comprising a base and a finger extending through the reaction zone for distributing a plasma field uniformly throughout the reaction zone. The process comprises heating a substrate to a deposition temperature in the range of about 300.degree. to 650.degree. C. Reactant gases are introduced into the PECVD reactor and a coating of about 0.2 to about 20 .mu.m is deposited onto the heated substrate. This low temperature process is particularly adapted to coating three-dimensional objects of metals, metal alloys and mixtures of metals.
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