发明授权
US5058063A Nonvolatile semiconductor memory device incorporating level shifting
circuits
失效
非线性半导体存储器件并入电平放大电路
- 专利标题: Nonvolatile semiconductor memory device incorporating level shifting circuits
- 专利标题(中): 非线性半导体存储器件并入电平放大电路
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申请号: US454740申请日: 1989-12-21
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公开(公告)号: US5058063A公开(公告)日: 1991-10-15
- 发明人: Yukio Wada , Tadashi Maruyama , Yasoji Suzuki
- 申请人: Yukio Wada , Tadashi Maruyama , Yasoji Suzuki
- 申请人地址: JPX Kawasaki
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX63-324593 19881222
- 主分类号: G11C17/00
- IPC分类号: G11C17/00 ; G11C16/04 ; G11C16/06 ; G11C16/10 ; G11C16/14
摘要:
In a nonvolatile semiconductor memory system comprising a memory chip and a batttery for driving the memory chip, the memory chip includes a memory-cell matrix, a row decoder, a first level-shifting circuit for shifting the level of the output of the row decoder, a column-selecting circuit, a column decoder, a second level-shifting circuit for shifting the level of the output of the column decoder, a sense amplifier, a third level-shifting circuit for shifting the level of the data which is to be written into the memory-cell matrix, a voltage-booster circuit, a timer circuit, and an oscillator circuit. The nonvolatile semiconductor memory system operates stably when driven by a low voltage or by a voltage over a broad range.