发明授权
US5060029A Step cut type insulated gate SIT having low-resistance electrode and
method of manufacturing the same
失效
具有低电阻电极的步进式绝缘栅极SIT及其制造方法
- 专利标题： Step cut type insulated gate SIT having low-resistance electrode and method of manufacturing the same
- 专利标题（中）： 具有低电阻电极的步进式绝缘栅极SIT及其制造方法
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申请号： US483740申请日： 1990-02-23
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公开(公告)号： US5060029A公开(公告)日： 1991-10-22
- 发明人: Jun-ichi Nishizawa , Nobuo Takeda
- 申请人： Jun-ichi Nishizawa , Nobuo Takeda
- 申请人地址： JPX
- 专利权人： Small Power Communication Systems Research Laboratories Co., Ltd.
- 当前专利权人： Small Power Communication Systems Research Laboratories Co., Ltd.
- 当前专利权人地址： JPX
- 优先权： JPX1-45292 19890228; JPX1-45293 19890228
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/335 ; H01L29/49 ; H01L29/772 ; H01L29/78
摘要：
This invention provides a step cut type insulated gate static induction tsistor having a first main electrode formed in one major surface of a semiconductor substrate, a second main electrode formed in a bottom portion of a U-shaped groove formed in one major surface of a semiconductor substrate, a control electrode formed on a side wall of the U-shaped groove and consisting of a thin insulating film and a polysilicon layer, and a low-resistance electrode of a refractory metal layer or a refractory metal silicide layer formed in at least part of the side wall of the polysilicon layer of the control electrode.
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