发明授权
US5091333A Reducing dislocations in semiconductors utilizing repeated thermal
cycling during multistage epitaxial growth
失效
在多级外延生长期间通过重复热循环来减少半导体中的位错
- 专利标题： Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth
- 专利标题（中）： 在多级外延生长期间通过重复热循环来减少半导体中的位错
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申请号： US241506申请日： 1988-09-07
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公开(公告)号： US5091333A公开(公告)日： 1992-02-25
- 发明人: John C. C. Fan , Bor-Yeu Tsaur , Ronald P. Gale , Frances M. Davis
- 申请人： John C. C. Fan , Bor-Yeu Tsaur , Ronald P. Gale , Frances M. Davis
- 申请人地址： MA Cambridge
- 专利权人： Massachusetts Institute of Technology
- 当前专利权人： Massachusetts Institute of Technology
- 当前专利权人地址： MA Cambridge
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/205 ; H01L21/365
摘要：
Dislocation densities are reduced in growing semiconductors from the vapor phase by employing a technique of interrupting growth, cooling the layer so far deposited, and then repeating the process until a high quality active top layer is achieved. The method of interrupted growth, coupled with thermal cycling, permits dislocations to be trapped in the initial stages of epitaxial growth.
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