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80 条记录 (耗时 0.046 秒)

    Color display with thin gap liquid crystal
    5.
    发明授权
    Color display with thin gap liquid crystal 失效
    彩色显示薄间隙液晶

    公开(公告)号：US06552704B2

    公开(公告)日：2003-04-22

    申请号：US08961744

    申请日：1997-10-31

    申请人： Matthew Zavracky ,  Wen-Foo Chern ,  Hiap L. Ong ,  John C. C. Fan ,  Bor-Yeu Tsaur ,  Alan Richard

    发明人： Matthew Zavracky ,  Wen-Foo Chern ,  Hiap L. Ong ,  John C. C. Fan ,  Bor-Yeu Tsaur ,  Alan Richard

    IPC分类号： G09G336

    CPC分类号： G09G3/3413 ,  G06F1/1626 ,  G06F1/163 ,  G06F3/14 ,  G09G3/3659 ,  G09G2310/0235 ,  G09G2310/024 ,  G09G2310/08 ,  G09G2320/041 ,  G09G2330/021 ,  H04N9/30

    摘要： An active matrix color sequential liquid crystal display has an active matrix circuit, a counterelectrode panel and an interposed layer of liquid crystal. The active matrix circuit has an array of transistor circuits formed in a first plane. Each transistor circuit is connected to a pixel electrode in an array of pixel electrodes having a small area. The counterelectrode panel extends in a second plane that is parallel to the first plane, such that the counterelectrode panel receives an applied voltage. The liquid crystal layer is interposed in a cavity between the two planes. In a preferred embodiment, an oxide layer extends over the pixel electrode array. The oxide can have a first thickness in a peripheral region around the array of the pixel electrodes and a thinner second thickness in a pixel electrode region extending over the array of pixel electrodes.

    摘要翻译： 有源矩阵色彩顺序液晶显示器具有有源矩阵电路，反电极面板和插入的液晶层。 有源矩阵电路具有形成在第一平面中的晶体管电路的阵列。 每个晶体管电路连接到具有小面积的像素电极阵列中的像素电极。 反电极板在与第一平面平行的第二平面中延伸，使得反电极板接收施加的电压。 液晶层插入在两个平面之间的空腔中。 在优选实施例中，氧化物层在像素电极阵列上延伸。 氧化物可以在像素电极的阵列周围的周边区域中具有第一厚度，并且在像素电极阵列上延伸的像素电极区域中具有更薄的第二厚度。

    Lateral epitaxial growth by seeded solidification
    6.
    发明授权
    Lateral epitaxial growth by seeded solidification 失效
    通过种子凝固进行外侧外延生长

    公开(公告)号：US4670088A

    公开(公告)日：1987-06-02

    申请号：US828601

    申请日：1986-02-11

    申请人： Bor-Yeu Tsaur ,  John C. C. Fan ,  Michael W. Geis

    发明人： Bor-Yeu Tsaur ,  John C. C. Fan ,  Michael W. Geis

    IPC分类号： C30B13/00 ,  C30B13/06 ,  C30B27/00 ,  H01L21/20 ,  H01L21/324 ,  C30B19/00

    CPC分类号： H01L21/324 ,  C30B13/00 ,  C30B13/06 ,  C30B27/00 ,  C30B29/60 ,  H01L21/2022 ,  Y10S148/134

    摘要： An improved method and apparatus for crystallizing amorphous or polycrystalline material is disclosed. In this invention, a material which is to be crystallized is formed on a substrate and single crystalline seed material is disposed in contact and/or adjacent to or with at least a portion of the material which is to be crystallized. A layer of material which serves as a "wetting agent" is then formed over the material to be crystallized. The structure thus formed is subjected to a heat treatment which melts the material being crystallized and when the material solidifies its crystalline structure is substantially epitaxial based on the seed material. The "wetting agent" layer serves to prevent deleterious balling up of the material during crystallization.

    摘要翻译： 公开了一种用于结晶非晶或多晶材料的改进方法和装置。 在本发明中，将要结晶的材料形成在基底上，并且将单晶种子材料设置成接触和/或邻近或与要结晶的材料的至少一部分接触。 然后在要结晶的材料上形成用作“润湿剂”的材料层。 对由此形成的结构进行热处理，该热处理熔化正在结晶的材料，并且当材料固化其晶体结构基于种子材料基本上是外延的。 “润湿剂”层用于防止在结晶过程中材料的有害的滚珠。

    Electrode for p-type gallium nitride-based semiconductors
    7.
    发明授权
    Electrode for p-type gallium nitride-based semiconductors 失效
    p型氮化镓基半导体电极

    公开(公告)号：US06734091B2

    公开(公告)日：2004-05-11

    申请号：US10187465

    申请日：2002-06-28

    申请人： Tchang-Hun Oh ,  Hong K. Choi ,  Bor-Yeu Tsaur ,  John C. C. Fan ,  Shirong Liao ,  Jagdish Narayan

    发明人： Tchang-Hun Oh ,  Hong K. Choi ,  Bor-Yeu Tsaur ,  John C. C. Fan ,  Shirong Liao ,  Jagdish Narayan

    IPC分类号： H01L2128

    CPC分类号： H01L33/42 ,  H01L21/28575 ,  H01L33/32

    摘要： An improved electrode for a p-type gallium nitride based semiconductor material is disclosed that includes a layer of an oxidized metal and a first and a second layer of a metallic material. The electrode is formed by depositing three or more metallic layers over the p-type semiconductor layer such that at least one metallic layer is in contact with the p-type semiconductor layer. At least two of the metallic layers are then subjected to an annealing treatment in the presence of oxygen to oxidize at least one of the metallic layers to form a metal oxide. The electrodes provide good ohmic contacts to p-type gallium nitride-based semiconductor materials and, thus, lower the operating voltage of gallium nitride-based semiconductor devices.

    摘要翻译： 公开了一种用于p型氮化镓基半导体材料的改进的电极，其包括氧化金属层和金属材料的第一和第二层。 电极通过在p型半导体层上沉积三个或更多个金属层而形成，使得至少一个金属层与p型半导体层接触。 然后至少两个金属层在氧的存在下进行退火处理以氧化至少一个金属层以形成金属氧化物。 电极为p型氮化镓基半导体材料提供良好的欧姆接触，从而降低氮化镓基半导体器件的工作电压。

    Bonding pad for gallium nitride-based light-emitting device
    9.
    发明授权
    Bonding pad for gallium nitride-based light-emitting device 失效
    用于氮化镓基发光器件的接合焊盘

    公开(公告)号：US07002180B2

    公开(公告)日：2006-02-21

    申请号：US10187468

    申请日：2002-06-28

    申请人： Steve Tchang-Hun Oh ,  Hong K. Choi ,  Bor-Yeu Tsaur ,  John C. C. Fan

    发明人： Steve Tchang-Hun Oh ,  Hong K. Choi ,  Bor-Yeu Tsaur ,  John C. C. Fan

    IPC分类号： H01L27/15

    CPC分类号： H01L33/40

    摘要： A bonding pad for an electrode is in contact with p-type gallium nitride-based semiconductor material that includes aluminum. The bonding pad may also includes one or more metals selected from the group consisting of palladium, platinum, nickel and gold. The bonding pad can be used to attach a bonding wire to the p-electrode in a semiconductor device, such as a light-emitting diode or a laser diode without causing degradation of the light-transmission and ohmic properties of the electrode. The bonding pad may be formed of substantially the same material as an electrode in making an ohmic contact with n-type gallium nitride-based semiconductor material (n-electrode). This allows the bonding pad and the n-electrode to be formed simultaneously when manufacturing a gallium nitride-based light-emitting device which substantially reduces the cost to manufacture the device.

    摘要翻译： 用于电极的焊盘与包括铝的p型氮化镓基半导体材料接触。 接合焊盘还可以包括一种或多种选自钯，铂，镍和金的金属。 接合焊盘可以用于在诸如发光二极管或激光二极管的半导体器件中的p电极上附接接合线，而不会导致电极的光透射和欧姆特性的劣化。 接合焊盘可以与与n型氮化镓基半导体材料（n电极）欧姆接触的与电极基本相同的材料形成。 这允许在制造基本上降低制造器件的成本的氮化镓基发光器件时同时形成焊盘和n电极。

    Semiconductor thin films
    10.
    发明授权
    Semiconductor thin films 失效
    半导体薄膜

    公开(公告)号：US4853076A

    公开(公告)日：1989-08-01

    申请号：US70599

    申请日：1987-07-09

    申请人： Bor-Yeu Tsaur ,  John C. C. Fan ,  Michael W. Geis

    发明人： Bor-Yeu Tsaur ,  John C. C. Fan ,  Michael W. Geis

    IPC分类号： C30B13/00 ,  C30B23/02 ,  C30B25/02 ,  C30B33/00 ,  H01L21/20

    CPC分类号： C30B29/06 ,  C30B13/00 ,  C30B23/02 ,  C30B25/02 ,  C30B33/00 ,  H01L21/2022 ,  Y10S438/938

    摘要： An improved method and apparatus for optimizing the electrical properties while crystallizing material is disclosed. In this invention, a material which is to be crystallized is formed on a substrate and subjected to a heat treatment to intentionally induce thermal stress while crystallizing the material. The heat treatment melts the material being crystallized and when the material solidifies, a built-in stress is retained which, in the case of n-doped Si on fused silica results in a tensile stress which produces an electron mobility in the film of 870 cm.sup.2 /volt-sec as compared to similarly fashioned unstressed n-doped Si on SiO.sub.2 coated Si which has an electron mobility of 500 cm.sup.2 /volt-sec.

    摘要翻译： 公开了一种用于在结晶材料时优化电性能的改进的方法和装置。 在本发明中，将要结晶的材料形成在基底上并进行热处理以在结晶材料的同时有意地引起热应力。 热处理熔化正在结晶的材料，并且当材料固化时，保留内在的应力，在熔融二氧化硅上的n掺杂Si的情况下，导致在870cm 2膜中产生电子迁移率的拉伸应力 /伏特，与具有500cm 2 /伏特电子迁移率的SiO 2涂覆的Si上的类似形状的未应力n掺杂Si相比。