发明授权
US5098858A Junction between metal and zincblende-type III-V compound semiconductor
and manufacturing method thereof
失效
金属和锌辉石型III-V族化合物半导体的结点及其制造方法
- 专利标题： Junction between metal and zincblende-type III-V compound semiconductor and manufacturing method thereof
- 专利标题（中）： 金属和锌辉石型III-V族化合物半导体的结点及其制造方法
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申请号： US545876申请日： 1990-06-29
-
公开(公告)号： US5098858A公开(公告)日： 1992-03-24
- 发明人: Kazuyoshi Ueno , Kazuyuki Hirose
- 申请人： Kazuyoshi Ueno , Kazuyuki Hirose
- 申请人地址： JPX
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JPX
- 优先权： JPX1-170072 19890630
- 主分类号： H01L29/812
- IPC分类号： H01L29/812 ; H01L21/28 ; H01L21/285 ; H01L21/329 ; H01L21/338 ; H01L29/45 ; H01L29/47 ; H01L29/872
摘要：
The method of manufacturing the metal-semiconductor junction in accordance with the present invention includes the step of forming a 2.times.2 surface superstructure in an ultrahigh vacuum by removing an oxide layer by means of a heat cleaning at temperatures not lower than 600.degree. C. while irradiating a (111) A or (111) B surface of a zincblende-type III-V compound semiconductor substrate with a beam of a group V element, the step of cooling the substrate down to room temperature while maintaining the surface superstructure and the step of depositing a metal on the surface.
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