Invention Grant
- Patent Title: Method of storing semiconductor substrate
- Patent Title (中): 存储半导体基板的方法
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Application No.: US455332Application Date: 1989-12-27
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Publication No.: US5105628APublication Date: 1992-04-21
- Inventor: Ryusuke Nakai
- Applicant: Ryusuke Nakai
- Applicant Address: JPX Osaka
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JPX Osaka
- Priority: JPX62-170440 19870708
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/673
Abstract:
A method for storing a semiconductor substrate preserves the semiconductor substrate at a temperature not more than 10.degree. C. in a sealed manner. After the surface of the semiconductor substrate has been cleaned by etching or the like, the semiconductor substrate is put in a bag of a synthetic resin sheet. An inert gas is introduced into the bag or the bag is brought into a vacuum state, the bag is sealed, and then maintained at the above temperature, whereby the cleaned surface is not recontaminated for a prolonged period of time.
Information query
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