Abstract:
A filter disposed as a cylinder around an axis line, and provided to be rotatable around the axis line, a treated water nozzle for emitting treated water toward an outer circumferential surface of the filter, a case provided to surround the filter, and including an outer cylindrical portion having a nozzle opening of the treated water nozzle therein, a filtered water flow path for guiding filtered water that has been transmitted through the filter to outside of the case from within the cylinder of the filter, and a discharge flow path for discharging discharged water that was not filtered through the filter to the outside of the case are provided.
Abstract:
An apparatus for pulling a single crystal by CZ method or LEC method is improved. To this end, the heater for heating the inside of the furnace is divided at least in the vicinity of the solid-liquid interface into at least two heaters. Using this apparatus, a single crystal with a decreased dislocation density can be obtained.
Abstract:
There is provided a water treatment apparatus, including: first membrane filtration means in which a filtration membrane having an average pore diameter of 1 μm or more is used; second membrane filtration means for treating water filtered by the first membrane filtration means, by using a microfiltration membrane or ultrafiltration membrane; and reverse osmosis membrane filtration means for treating water filtered by the second membrane filtration means. In particular, there is provided a water treatment apparatus, wherein a hydrophobic polymer membrane that is not subjected to hydrophilicizing processing is used as the filtration membrane having an average pore diameter of 1 μm or more. There is also provided a water treatment method that can be implemented by these water treatment apparatuses.
Abstract:
A GaAs single crystal substrate and an epitaxial wafer using the same suppress the generation of slips during growth of the epitaxial layer, and improve the breakdown withstanding characteristic of devices fabricated on such substrates. The GaAs single crystal substrate has a mean dislocation density in plane of at most 2×104 cm−2, a carbon concentration of 2.5 to 20.0×1015 cm−3, a boron concentration of 2.0 to 20.0×1016 cm−3, an impurity concentration other than carbon and boron of at most 1×1017 cm−3, an EL2 concentration of 5.0 to 10.0×1015 cm−3, resistivity of 1.0 to 5.0×108 &OHgr;·cm and a mean residual strain measured by photoelastic analysis of at most 1.0×10−5.
Abstract translation:GaAs单晶衬底和使用其的外延晶片抑制外延层生长期间的滑移的产生,并且改善在这种衬底上制造的器件的击穿耐受特性。 GaAs单晶基板的平面位错密度为2×104cm-2以下,碳浓度为2.5〜20.0×10 15 cm -3,硼浓度为2.0〜20.0×10 16 cm -3,碳以外的杂质浓度 和至多1×10 17 cm -3的硼,EL 2浓度为5.0至10.0×10 15 cm -3,电阻率为1.0至5.0×10 8ΩEGA.cm,通过光弹性分析测量的平均残余应变为至多1.0×10 -5。
Abstract:
A filter disposed as a cylinder around an axis line, and provided to be rotatable around the axis line, a treated water nozzle for emitting treated water toward an outer circumferential surface of the filter, a case provided to surround the filter, and including an outer cylindrical portion having a nozzle opening of the treated water nozzle therein, a filtered water flow path for guiding filtered water that has been transmitted through the filter to outside of the case from within the cylinder of the filter, and a discharge flow path for discharging discharged water that was not filtered through the filter to the outside of the case are provided.
Abstract:
Single crystal during growth is irradiated by an slitted X-ray beam and the diffracted X-ray beam from the crystal is monitored by an image amplifier with a two dimensional manner so that the diffracted X-ray can be monitored by the image amplifier even if there occurs change of the diameter of the crystal. A half portion of the single crystal during growth is irradiated by a slitted X-ray beam and the other half portion of the crystal is irradiated by the X-ray beam over the entire height of the crystal so that the Laue spots of the crystal growth is displayed on one half portion of the display of the image amplifier and a shape of the crystal being pulled up is monitored in another half portion of the display of the image amplifier.
Abstract:
In the pulling of a single crystal from a melt by the Czochralski method the temperature of the melt and the crystal is controlled by a plurality of heaters surrounding the crucible in vertically disposed relation relative to each other. The lowermost heater is controlled by an automatic temperature controller in response to the temperature of the bottom of the crucible and the remaining heaters are controlled by the selectring a specific ratio for the power supply of each of the remaining heaters with respect to the power supply of the lowermost heater.
Abstract:
There is provided a cleaning method for a hydrophobic filtration membrane used for membrane filtration of water to be treated such as seawater, discharged water and ballast water including a jelly-like suspended substance and clogged with the suspended substance in the water to be treated, the filtration membrane being brought into contact with limonene-containing water, or backwashing of the filtration membrane with a cleaning liquid being done, and then, a flow having air taken therein being applied onto a surface of the filtration membrane or a water stream from an eductor nozzle being sprayed onto the filtration membrane. There is also provided a membrane filtration apparatus capable of efficiently performing the above-mentioned cleaning method.
Abstract:
An IC wafer with a uniform distribution of impurities is obtained by a pretreatment comprising annealing a semiconductor substrate at a high temperature for a long period of time and then cooling rapidly before IC processing.
Abstract:
A ballast water treatment apparatus includes a filter that is cylindrically formed so as to surround an axis, a case that includes an outer cylindrical portion that is disposed so as to surround the filter, a rotation mechanism that rotates the filter around the axis, an untreated water nozzle that ejects untreated water to a filter-surrounding region that is defined by an outer peripheral surface of the filter and the outer cylindrical portion, a cleaning water nozzle that ejects cleaning water toward the outer peripheral surface of the filter, a filtered water channel through which filtered water that has passed through the filter flows from a region inside the filter to outside of the case, and a discharge channel through which discharged water that has not passed through the filter is discharged from the filter-surrounding region to outside of the case.