发明授权
- 专利标题： Semiconductor device with a multi-stepped source region and method for producing the same
- 专利标题（中）： 具有多级源极区域的半导体器件及其制造方法
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申请号： US742081申请日： 1991-07-31
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公开(公告)号： US5111258A公开(公告)日： 1992-05-05
- 发明人: Mutsumi Sasaki , Koji Takahashi , Shuichi Suzuki
- 申请人： Mutsumi Sasaki , Koji Takahashi , Shuichi Suzuki
- 申请人地址： JPX Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX1-61543 19890314
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/06 ; H01L29/08 ; H01L29/739 ; H01L29/78
摘要：
A semiconductor device includes a first region, a well-shaped second region formed in the first region and a third region formed in the well-shaped second region. Both the first region and the third region have a first conductive type, the well-shaped second region has a second conductive type. A gate electrode is formed on a channel of the well-shaped second region. The channel is sandwiched between the first region and the third region. According to the present invention, the depth of the third region is very deep in a portion near the channel and is very shallow in a portion far from the channel. A resistance of the well-shaped second region near a portion of the third region far from the channel is lower than near the portion of the third region near the channel.
公开/授权文献
- US5739947A Nonlinear optical power limiter using self-trapping of light 公开/授权日：1998-04-14
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