Identifying medium and identifying method for object
    4.
    发明授权
    Identifying medium and identifying method for object 失效
    识别媒体和识别对象的方法

    公开(公告)号:US07201821B2

    公开(公告)日:2007-04-10

    申请号:US10503493

    申请日:2003-02-12

    摘要: The present invention provides a discrimination medium A for discriminating the authenticity of an article by providing an optically discriminating mark on the article. A film 20 having a light reflecting layer of a polymer cholesteric liquid crystal having a circular polarization light selectivity for reflecting a specific circular polarization light is fixed to a part of the surface of a support 10. A printed portion is made by printing on the portions other than the film 20 of the support 10 in substantially the same color as that shown when the film 20 is viewed from the front. The discrimination medium A appears to be red at the support 10 and the film 20 when viewed from the front (although the film has a metallic luster), but at a larger viewing angle, the film 20 changes to blue by the blue-shift of the polymer cholesteric liquid crystal so as to exhibit a color different from that of the support 10.

    摘要翻译: 本发明提供一种辨别介质A,用于通过在物品上提供光学鉴别标记来区分物品的真实性。 具有用于反射特定的圆偏振光的具有圆偏振光选择性的聚合物胆甾型液晶的光反射层的膜20被固定到支撑体10的表面的一部分。 印刷部分通过以与从前面观看薄膜20所示的颜色基本相同的颜色在支撑体10的薄膜20以外的部分上印刷而制成。 当从前面观察时,识别介质A看起来在支撑件10和膜20处是红色的(尽管膜具有金属光泽),但是在较大的视角下,膜20由于蓝移而变为蓝色 聚合物胆甾型液晶,以显示与支持体10不同的颜色。

    Discrimination medium and article to be discriminated
    5.
    发明申请
    Discrimination medium and article to be discriminated 有权
    歧视媒介和待歧视的物品

    公开(公告)号:US20070077404A1

    公开(公告)日:2007-04-05

    申请号:US10577075

    申请日:2004-10-27

    IPC分类号: B32B9/04

    摘要: A breakable seal can be discriminated more easily than the conventional one. The discrimination medium 100 has a cholesteric liquid crystal layer 104, a substrate layer 105, an adhesive layer 102, and a partial peeling layer 103. The discrimination medium 100 has an adhesion strength XA between the adhesive layer 102 and the partial peeling layer 103, an adhesion strength XB between the partial peeling layer 103 and the cholesteric liquid crystal layer 104, and an adhesion strength XC between the cholesteric liquid crystal layer 104 and the substrate layer 105. The relationships XA

    摘要翻译: 可以比常规密封件更容易地识别可破坏的密封件。 识别介质100具有胆甾型液晶层104,基板层105,粘合层102和部分剥离层103.鉴别介质100在粘合层之间具有粘合强度X SUB 102和部分剥离层103,部分剥离层103和胆甾醇型液晶层104之间的粘合强度X B B以及胆甾醇型胆甾型液晶层之间的粘附强度X < 液晶层104和基板层105.关系X A X X和X A X X C 在区域106,108和110处满足。关系X C X A和X C 在区域107和109处被满足。以上述方式,当识别介质100从物品101剥离时,识别介质100被分离成识别介质116和识别介质117.例如,上述 胆固醇液体哭泣 提供了可破坏的密封件,使得可破坏的密封件允许在可破坏的密封件断裂之前确定辨别介质是否可靠,并且当可破坏的密封件断裂时允许确认其可破坏的密封件的断裂 。

    Method for making vertical MOS having a deep source region near the
channel
    7.
    发明授权
    Method for making vertical MOS having a deep source region near the channel 失效
    用于制造在通道附近具有深源区的垂直MOS的方法

    公开(公告)号:US5397728A

    公开(公告)日:1995-03-14

    申请号:US214156

    申请日:1994-03-17

    摘要: A semiconductor device includes a first region, a well-shaped second region formed in the first region and a third region formed in the well-shaped second region, both the first region and the third region have a first conductive type, the well-shaped second region has a second conductive type. A gate electrode is formed on a channel of the well-shaped second region. The channel is sandwiched between the first region and the third region. According to the present invention, the depth of the third region is very deep in a portion near the channel and is very shallow in a portion far from the channel. A resistance of the well-shaped second region near a portion of the third region far from the channel is lower than near the portion of the third region near the channel.

    摘要翻译: 半导体器件包括第一区域,形成在第一区域中的良好形状的第二区域和形成在阱状第二区域中的第三区域,第一区域和第三区域都具有第一导电类型,阱状的 第二区域具有第二导电类型。 在良好形状的第二区域的沟道上形成栅电极。 通道夹在第一区域和第三区域之间。 根据本发明,第三区域的深度在通道附近的部分非常深,并且在远离通道的部分中非常浅。 远离通道的第三区域附近的阱状第二区域的电阻低于靠近通道的靠近第三区域的部分的电阻。

    Object identifying medium using multi-layer thin-film
    8.
    发明授权
    Object identifying medium using multi-layer thin-film 有权
    使用多层薄膜的物体识别介质

    公开(公告)号:US07590239B2

    公开(公告)日:2009-09-15

    申请号:US10527446

    申请日:2003-09-12

    IPC分类号: G09C3/00 G03H1/00

    摘要: A discrimination medium for objects by which counterfeiting can be prevented, authenticity of the article can be easily and reliably determined, and the production cost can be reduced is provided. In the discrimination medium, the support body 31 and the pattern 20 appear to be the same color when viewed from a specific angle (for instance, viewing from the front). On the other hand, when the viewing angle is increased, the color of the pattern 20 composed of a multilayer thin film changes by color shift, whereby the pattern 20 becomes a color different from the support body 31.

    摘要翻译: 可以容易且可靠地确定可以防止伪造的物体的识别介质,并且可以确定制品的真实性,并且可以降低生产成本。 在识别介质中,从特定角度(例如,从前方观察)观察时,支撑体31和图案20看起来是相同的颜色。 另一方面,当视角增加时,由多层薄膜构成的图案20的颜色由颜色偏移而改变,由此图案20变成与支撑体31不同的颜色。

    Semiconductor device
    9.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号:US5177592A

    公开(公告)日:1993-01-05

    申请号:US671554

    申请日:1991-03-19

    摘要: A semiconductor includes a conductor layer formed on one side thereof toward a first surface of a substrate, and a first interlayer insulation layer on the conductor layer. The first interlayer insulation layer has a first opening extending therethrough to the conductor layer. A first wiring layer is provided on the first interlayer insulation layer, and connected to the conductor layer via the first opening. A second interlayer insulation layer is formed on the first wiring layer and has a second opening extending through the first opening to the first wiring layer. A second wiring layer is formed on the second interlayer insulation layer and extends through the second interlayer to the first wiring layer and/or the conductor layer via the first opening and the second opening.

    摘要翻译: 半导体包括在其一侧朝向基板的第一表面形成的导体层和在导体层上的第一层间绝缘层。 第一层间绝缘层具有穿过其延伸到导体层的第一开口。 第一布线层设置在第一层间绝缘层上,并经由第一开口连接到导体层。 第二层间绝缘层形成在第一布线层上,并且具有延伸穿过第一开口的第二开口到第一布线层。 第二布线层形成在第二层间绝缘层上,并且经由第一开口和第二开口延伸穿过第二中间层到第一布线层和/或导体层。