发明授权
US5114906A Process for depositing Tl-containing superconducting thin films on (110)
MgO substrates
失效
在（110）MGO基板上沉积含TL超导薄膜的工艺
- 专利标题： Process for depositing Tl-containing superconducting thin films on (110) MgO substrates
- 专利标题（中）： 在（110）MGO基板上沉积含TL超导薄膜的工艺
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申请号： US663451申请日： 1991-03-04
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公开(公告)号： US5114906A公开(公告)日： 1992-05-19
- 发明人: Kenjiro Higaki , Keizo Harada , Naoji Fujimori , Hideo Itozaki , Shuji Yazu
- 申请人： Kenjiro Higaki , Keizo Harada , Naoji Fujimori , Hideo Itozaki , Shuji Yazu
- 申请人地址： JPX Osaka
- 专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人地址： JPX Osaka
- 优先权： JPX63-149414 19880617
- 主分类号： C01G1/00
- IPC分类号： C01G1/00 ; C01G15/00 ; C04B41/87 ; C23C14/08 ; H01B12/06 ; H01B13/00 ; H01L39/24
摘要：
Improvement in a superconducting thin film of a superconducting compound oxide containing thallium (Tl) deposited on a substrate, characterized in that the superconducting thin film is deposited by PVD on {110} plane of a single crystal of magnesium oxide (MgO).
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