发明授权
- 专利标题： MOS type semiconductor device and method for manufacturing the same
- 专利标题（中）： MOS型半导体器件及其制造方法
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申请号： US577749申请日： 1990-09-05
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公开(公告)号： US5115290A公开(公告)日： 1992-05-19
- 发明人: Kouji Murakami , Taira Matsunaga
- 申请人： Kouji Murakami , Taira Matsunaga
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX1-230642 19890906
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/28 ; H01L23/522 ; H01L29/423 ; H01L29/49 ; H01L29/78
摘要：
A MOS type semiconductor device and a method for the manufacture of the same are disclosed in which a gate electrode is so formed over a semiconductor substrate of a first conductivity type with a gate insulating film formed therebetween as to provide a three-layered structure composed of a first high melting point metal silicide layer formed on the gate insulating film, high melting point metal layer formed on the first high melting point metal silicide and a second high melting point metal silicide layer formed on the high melting point metal layer. In the gate electrode, a length of the first high melting point silicide layer defined in the same direction as that in which a channel region extends is made smaller in length than the high melting point metal layer.
公开/授权文献
- US4003796A Apparatus for mixing a liquid phase with a gaseous phase 公开/授权日：1977-01-18
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