发明授权
US5116479A Process for producing transparent conductive film comprising indium oxide
失效
用于制造包含氧化铟的透明导电膜的方法
- 专利标题: Process for producing transparent conductive film comprising indium oxide
- 专利标题(中): 用于制造包含氧化铟的透明导电膜的方法
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申请号: US524768申请日: 1990-05-17
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公开(公告)号: US5116479A公开(公告)日: 1992-05-26
- 发明人: Kyuzo Nakamura , Satoru Ishibashi , Yoshifumi Ota , Yasushi Higuchi
- 申请人: Kyuzo Nakamura , Satoru Ishibashi , Yoshifumi Ota , Yasushi Higuchi
- 申请人地址: JPX Kanagawa
- 专利权人: Nihon Shinku Gijutsu Kabushiki Kaisha
- 当前专利权人: Nihon Shinku Gijutsu Kabushiki Kaisha
- 当前专利权人地址: JPX Kanagawa
- 优先权: JPX1-50086 19890303
- 主分类号: C08J7/06
- IPC分类号: C08J7/06 ; C23C14/08 ; C23C14/34 ; C23C14/35 ; H01B5/14 ; H01J37/34
摘要:
A process and apparatus for producing an In-O or In-Sn-O based transparent conductive film by a sputtering process is provided. The sputtering voltage is kept constant at 350V or less by maintaining the intensity of the magnetic field on the surface of the target at 400 Oe or greater. The apparatus contains a vacuum chamber wherein the substrate and target are mounted in opposite to each other. An electromagnet, used for adjusting the intensity of the magnetic field is located on the rear surface of the target. Additionally provided is a controller for the electric current supplied to the electromagnet. The controller is also connected to a DC power supply for the electromagnet.
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