发明授权
- 专利标题: Method for controlling specific resistance of single crystal and an apparatus therefor
- 专利标题(中): 用于控制单晶和其装置的特定电阻的方法
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申请号: US614587申请日: 1990-11-16
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公开(公告)号: US5129986A公开(公告)日: 1992-07-14
- 发明人: Hidetoshi Seki , Seiichiro Ohtsuka , Masahiko Baba
- 申请人: Hidetoshi Seki , Seiichiro Ohtsuka , Masahiko Baba
- 申请人地址: JPX Tokyo
- 专利权人: Shin-Etsu Handotai Co., Ltd.
- 当前专利权人: Shin-Etsu Handotai Co., Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX1-296151 19891116
- 主分类号: C30B15/20
- IPC分类号: C30B15/20 ; C30B15/00 ; C30B29/06
摘要:
A method for controlling a specific resistance of a single crystal in a Czochralski-method type single crystal pulling apparatus having a hermetical chamber in which the single crystal is pulled up from a polycrystal melt and an inert gas supply and exhaust system by means of which an inert gas is supplied to the hermetical chamber and exhausted therefrom; the method being characterized in that the pneumatic pressure in the hermetical chamber and the supply rate of the inert gas are controlled in accordance with a prepared control pattern with respect to the passage of pulling time.
公开/授权文献
- US5725646A Water-based offset lithographic printing ink 公开/授权日:1998-03-10