发明授权
- 专利标题： Field effect transistor
- 专利标题（中）： 场效应晶体管
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申请号： US658463申请日： 1991-02-22
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公开(公告)号： US5132752A公开(公告)日： 1992-07-21
- 发明人: Yasunari Umemoto , Nobuo Kotera , Kiichi Ueyanagi , Norikazu Hashimoto , Nobutoshi Matsunaga , Yasuo Wada , Shoji Shukuri , Noboru Masuda , Takehisa Hayashi , Hirotoshi Tanaka
- 申请人： Yasunari Umemoto , Nobuo Kotera , Kiichi Ueyanagi , Norikazu Hashimoto , Nobutoshi Matsunaga , Yasuo Wada , Shoji Shukuri , Noboru Masuda , Takehisa Hayashi , Hirotoshi Tanaka
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX60-108121 19850522; JPX60-263890 19851126; JPX61-56810 19860317; JPX61-56811 19860317
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/812
摘要：
A field effect transistor formed on a semi-insulator or compound semiconductor substrate comprises a first semiconductor layer forming a source region, a drain region and a channel layer, and a second semiconductor layer having a reverse conduction type to that of the first semiconductor layer. The second semiconductor layer is doped so that it will be totally depleted. Therefore, a portion of the second semiconductor layer adjacent to the substrate will remain conductive. The field effect transistor with this structure prevents the short channel effect and the soft error due to .alpha.-particles. A threshold voltage control arrangement is also provided using the feature of a control electrode coupled to the second semiconductor layer and a feedback arrangement.
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