公开(公告)号：US5132752A

公开(公告)日：1992-07-21

申请号：US658463

申请日：1991-02-22

申请人： Yasunari Umemoto ,  Nobuo Kotera ,  Kiichi Ueyanagi ,  Norikazu Hashimoto ,  Nobutoshi Matsunaga ,  Yasuo Wada ,  Shoji Shukuri ,  Noboru Masuda ,  Takehisa Hayashi ,  Hirotoshi Tanaka

发明人： Yasunari Umemoto ,  Nobuo Kotera ,  Kiichi Ueyanagi ,  Norikazu Hashimoto ,  Nobutoshi Matsunaga ,  Yasuo Wada ,  Shoji Shukuri ,  Noboru Masuda ,  Takehisa Hayashi ,  Hirotoshi Tanaka

IPC分类号： H01L29/10 ,  H01L29/812

CPC分类号： H01L29/1075 ,  H01L29/812 ,  Y10S257/903

摘要： A field effect transistor formed on a semi-insulator or compound semiconductor substrate comprises a first semiconductor layer forming a source region, a drain region and a channel layer, and a second semiconductor layer having a reverse conduction type to that of the first semiconductor layer. The second semiconductor layer is doped so that it will be totally depleted. Therefore, a portion of the second semiconductor layer adjacent to the substrate will remain conductive. The field effect transistor with this structure prevents the short channel effect and the soft error due to .alpha.-particles. A threshold voltage control arrangement is also provided using the feature of a control electrode coupled to the second semiconductor layer and a feedback arrangement.

摘要翻译： 形成在半绝缘体或化合物半导体衬底上的场效应晶体管包括形成源极区，漏极区和沟道层的第一半导体层以及具有与第一半导体层相反的导通型的第二半导体层。 第二半导体层被掺杂以使其完全耗尽。 因此，与衬底相邻的第二半导体层的一部分将保持导电。 具有这种结构的场效应晶体管防止短沟道效应和由于α-粒子引起的软误差。 还使用耦合到第二半导体层的控制电极的特征和反馈装置来提供阈值电压控制装置。

公开(公告)号：US4902635A

公开(公告)日：1990-02-20

申请号：US175704

申请日：1988-03-31

申请人： Yoshinori Imamura ,  Masaru Miyazaki ,  Akihisa Terano ,  Nobutoshi Matsunaga ,  Hiroshi Yanazawa

发明人： Yoshinori Imamura ,  Masaru Miyazaki ,  Akihisa Terano ,  Nobutoshi Matsunaga ,  Hiroshi Yanazawa

IPC分类号： H01L21/338 ,  H01L21/768 ,  H01L21/8252 ,  H01L23/532 ,  H01L29/417 ,  H01L29/423 ,  H01L29/812

CPC分类号： H01L23/5329 ,  H01L21/7688 ,  H01L21/8252 ,  H01L29/41775 ,  H01L29/42316 ,  H01L2924/0002

摘要： This invention is related to the method for production of semiconductor devices suitable for increasing the integration density of semiconductor integrated circuits, especially GaAs semiconductor IC devices.This invention uses no third wiring metal, contact hole or through hole for connection between the Schottky junction and ohmic electrodes formed on the GaAs semiconductor substrate required in the conventional technology, but provides the method for direct connection between the two electrodes stated above by means of vapor deposition, ion implantation, sputtering, CVD, plasma CVD, dry etching and wet etching.Since the application of this invention enables the two electrodes stated above to be directly connected with high yield, the element area at the connecting portion can be reduced to less than half as compared with the same required in the conventional method, the total element area can be reduced greatly.

摘要翻译： 本发明涉及适用于提高半导体集成电路，尤其是GaAs半导体IC器件的集成密度的半导体器件的制造方法。 本发明不使用在传统技术中所需的GaAs半导体衬底上形成的肖特基结和欧姆电极之间的第三布线金属，接触孔或通孔，而是提供了通过以下方式直接连接在上述两个电极之间的方法： 气相沉积，离子注入，溅射，CVD，等离子体CVD，干蚀刻和湿蚀刻。 由于本发明的应用使得上述两个电极能够以高产率直接连接，所以连接部分的元件面积可以比常规方法所需的量减少到小于一半，总元件面积可以 大大减少