The present invention relates to an aluminum deposited film and a process for producing it. Since the surface area coefficient C of the surface of the deposited layer is not greater than 1.00.times.10.sup.-4 or aluminum crystals the [1, 1, 0] planes of which are oriented in parallel with the surface of a base film are contained in an aluminum thin layer in an aluminum deposited film. The corrosion resistance in a high-temperature and high-humidity atomsphere of the aluminum deposited film is excellent. A capacitor coated with the aluminum deposited film has excellent moisture resistance even if its encapsulation is simple, or has increased moisture resistance when its encapsulation is constructed as one similar to that of a conventional capacitor.