发明授权
- 专利标题： Tungsten film forming apparatus
- 专利标题（中）： TUNGSTEN FILM成型设备
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申请号： US613730申请日： 1990-11-21
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公开(公告)号： US5149378A公开(公告)日： 1992-09-22
- 发明人: Tadahiro Ohmi , Nobuhiro Miki , Matagoroh Maeno , Hirohisa Kikuyama
- 申请人： Tadahiro Ohmi , Nobuhiro Miki , Matagoroh Maeno , Hirohisa Kikuyama
- 申请人地址： JPX Osaka
- 专利权人： Hashimoto Kasei Kabushiki-Kaisya
- 当前专利权人： Hashimoto Kasei Kabushiki-Kaisya
- 当前专利权人地址： JPX Osaka
- 优先权： JPX1-090226 19890410
- 主分类号： C23C16/02
- IPC分类号： C23C16/02 ; C23C16/14 ; C23C16/44 ; H01L21/28 ; H01L21/285
摘要：
A tungsten film forming apparatus includes a reaction chamber, means for introducing WF.sub.6 into said reaction chamber, and means for introducing H.sub.2 gas into said reaction chamber, wherein at least the portion of at least said reaction chamber is made of the metal material whose surface is covered with the fluorinated paasivation film mainly consisting of the almost stoichiometric metal fluoride. It becomes possible to form a high quality tungsten film at a low substrate temperature by use of said tungsten film forming apparatus.