发明授权
- 专利标题: Semiconductor integrated circuit device
- 专利标题(中): 半导体集成电路器件
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申请号: US616705申请日: 1990-11-20
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公开(公告)号: US5151772A公开(公告)日: 1992-09-29
- 发明人: Yasushi Takahashi , Hiromi Matsuura , Yoshihisa Koyama , Masaya Muranaka , Katsutaka Kimura , Kazuyuki Miyazawa , Masamichi Ishihara , Hidetoshi Iwai
- 申请人: Yasushi Takahashi , Hiromi Matsuura , Yoshihisa Koyama , Masaya Muranaka , Katsutaka Kimura , Kazuyuki Miyazawa , Masamichi Ishihara , Hidetoshi Iwai
- 申请人地址: JPX Tokyo JPX Kodaira
- 专利权人: Hitachi, Ltd.,Hitachi VLSI Engineering Corp.
- 当前专利权人: Hitachi, Ltd.,Hitachi VLSI Engineering Corp.
- 当前专利权人地址: JPX Tokyo JPX Kodaira
- 优先权: JPX62-235901 19870919; JPX62-320936 19871218
- 主分类号: H01L23/522
- IPC分类号: H01L23/522 ; H01L27/108
摘要:
A semiconductor integrated circuit device is provided which includes a memory cell array located in a generally central area of a semiconductor substrate with peripheral circuits located at both ends of the semiconductor substrate. A wiring layer is also provided which couples the peripheral circuits to one another. This wiring layer is arranged to have a double-layer structure of first and second aluminum layers which are electrically coupled to one another.
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