Semiconductor memory device with low-house pads for electron beam test
    7.
    发明授权
    Semiconductor memory device with low-house pads for electron beam test 失效
    半导体存储器件,具有用于电子束测试的低屋垫

    公开(公告)号:US5021998A

    公开(公告)日:1991-06-04

    申请号:US339843

    申请日:1989-04-18

    CPC分类号: H01L27/10808

    摘要: Disclosed are measurement (observation) pads for judging whether or not a dynamic random access memory (DRAM) adopting a shared sense system is functioning as designed. Concretely, measurement pads are formed by the step of forming a second layer of wiring respectively connected to pairs of complementary data lines which are formed by the step of forming a first layer of wiring, and the signal waveforms of the pairs of complementary data lines are measured using the measurement pads. Further, the measurement pads are provided between wiring layers which become fixed potentials in, at least, the operation of measuring data. In addition, each of the measurement pads is used in common by data lines which are respectively connected to two memory cells located in different memory cell mats.

    摘要翻译: 公开了用于判断采用共享感测系统的动态随机存取存储器(DRAM)是否如此设计的功能的测量(观察)焊盘。 具体地,通过形成分别连接到形成第一层布线的步骤形成的互补数据线对的第二层布线的步骤形成测量焊盘,并且互补数据线对的信号波形是 使用测量垫测量。 此外,至少在测量数据的操作中,测量焊盘设置在成为固定电位的布线层之间。 此外,每个测量焊盘由分别连接到位于不同存储单元垫中的两个存储单元的数据线共同使用。

    Semiconductor memorizing device
    8.
    发明授权
    Semiconductor memorizing device 失效
    半导体记忆装置

    公开(公告)号:US4849939A

    公开(公告)日:1989-07-18

    申请号:US100752

    申请日:1987-09-24

    CPC分类号: G11C29/835 G11C8/00

    摘要: A semiconductor memory having a memory array, a first and a second selection line which are connected to a memory cell, and a selection means which selects either one of the selection lines. The selection means includes a selection circuit which optionally selects the first selection line or the second selection line when an address signal corresponding to the first selection line is aligned with a predetermined address signal.

    摘要翻译: 具有连接到存储单元的存储器阵列,第一和第二选择线的半导体存储器以及选择选择线之一的选择装置。 选择装置包括选择电路,当与第一选择线对应的地址信号与预定的地址信号对准时,可选地选择第一选择线或第二选择线。

    Semiconductor memory device having redundant column and operation method
thereof
    9.
    发明授权
    Semiconductor memory device having redundant column and operation method thereof 失效
    具有冗余列的半导体存储器件及其操作方法

    公开(公告)号:US5485425A

    公开(公告)日:1996-01-16

    申请号:US375727

    申请日:1995-01-20

    CPC分类号: G11C17/126 G11C29/84

    摘要: There is provided a semiconductor memory device having a redundant column. This memory device has a redundant column disposed in the direction of the Y-system address, a ROM accessed by using an X-system address, a Y-system address signal having a defective cell included in the cells therein being electrically written into the ROM, a comparator circuit for comparing a signal read out from this ROM with a Y-system address signal and outputting a coincidence signal upon coincidence, and a defect relieving circuit responsive to output of the coincidence signal from this comparator circuit to cause selection of the redundant column of Y system instead of the Y-system address selection device.

    摘要翻译: 提供了具有冗余列的半导体存储器件。 该存储装置具有沿Y系统地址的方向设置的冗余列,通过使用X系统地址访问的ROM,其中包含在其中的单元中的具有缺陷单元的Y系统地址信号被电写入ROM 比较电路,用于将从该ROM读出的信号与Y系统地址信号进行比较,并且一致地输出一致信号,以及响应来自该比较器电路的符合信号的输出的缺陷消除电路,以选择冗余 Y系列的列,而不是Y系统地址选择设备。

    Semiconductor device test circuit having test enable circuitry and test
mode-entry circuitry
    10.
    发明授权
    Semiconductor device test circuit having test enable circuitry and test mode-entry circuitry 失效
    具有测试使能电路和测试模式进入电路的半导体器件测试电路

    公开(公告)号:US5596537A

    公开(公告)日:1997-01-21

    申请号:US275700

    申请日:1994-07-14

    CPC分类号: G11C29/46

    摘要: A semiconductor device test circuit for inclusion on a semiconductor chip having a semiconductor device thereon, wherein a test mode with respect to the semiconductor device is not entered during normal use of the semiconductor device and the test mode can be entered without applying a voltage higher than the power supply voltage to an external terminal of the semiconductor device. The test circuit includes a decoder circuit which detects the matching of a first address input corresponding to a test mode, and a latch circuit which latches the signal indicating the matching of the first address input with a test mode. A second decoder circuit then detects the matching of a second address to the test mode, the second address being input when the matching signal for the first address has been latched. A second latch circuit latches the signal indicating the matching of the second address. A third address input is processed by a third decoder circuit and a third latch circuit in the same way. This means that when a plurality of addresses (three addresses in the described example) which are consecutively input to the respective decoder circuits are in a predetermined, specific combination, a test enable signal is output and the test mode is activated.

    摘要翻译: 一种用于包含在其上具有半导体器件的半导体芯片上的半导体器件测试电路,其中在半导体器件的正常使用期间不进入相对于半导体器件的测试模式,并且可以进入测试模式而不施加高于 对半导体器件的外部端子的电源电压。 测试电路包括检测与测试模式相对应的第一地址输入的匹配的解码器电路和锁存指示第一地址输入与测试模式匹配的信号的锁存电路。 第二解码器电路然后检测第二地址与测试模式的匹配,当第一地址的匹配信号被锁存时,第二地址被输入。 第二锁存电路锁存指示第二地址匹配的信号。 第三地址输入由第三解码器电路和第三锁存电路以相同的方式处理。 这意味着当连续输入到各个解码器电路的多个地址(所述示例中的三个地址)处于预定的特定组合时,输出测试使能信号并且测试模式被激活。