发明授权
US5153697A Integrated circuit that combines multi-epitaxial power transistors with
logic/analog devices, and a process to produce same
失效
将多外延功率晶体管与逻辑/模拟器件相结合的集成电路，以及生产相同的工艺
- 专利标题： Integrated circuit that combines multi-epitaxial power transistors with logic/analog devices, and a process to produce same
- 专利标题（中）： 将多外延功率晶体管与逻辑/模拟器件相结合的集成电路，以及生产相同的工艺
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申请号： US695821申请日： 1991-05-06
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公开(公告)号： US5153697A公开(公告)日： 1992-10-06
- 发明人: Dan M. Mosher , Cornelia H. Blanton , Joe R. Trogolo , Larry Latham , David R. Cotton
- 申请人： Dan M. Mosher , Cornelia H. Blanton , Joe R. Trogolo , Larry Latham , David R. Cotton
- 申请人地址： TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： TX Dallas
- 主分类号： H01L21/74
- IPC分类号： H01L21/74 ; H01L21/8222 ; H01L21/8226 ; H01L21/8234 ; H01L21/8248 ; H01L21/8249
摘要：
An integrated circuit is formed on an N-type semiconductor wafer having a first N-type epitaxial layer on the substrate, a P-type epitaxial layer over the first N-type epitaxial layer, and a second N-type epitaxial layer over the P-type epitaxial layer. There are also a plurality of sets of P-type isolation regions separating the P-type epitaxial region and the surface of the second N-type epitaxial region into epitaxial tank regions for formation of bipolar and CMOS devices, combining high power, low power, logic, switching, analog, high current, low current, digital, and linear bipolar transistors along with CMOS transistors. The characteristics of the different type of devices are combined into a single process flow.