发明授权
US5158901A Field effect transistor having control and current electrodes positioned
at a planar elevated surface and method of formation
失效
场效应晶体管具有位于平面升高表面处的控制和电流电极以及形成方法
- 专利标题： Field effect transistor having control and current electrodes positioned at a planar elevated surface and method of formation
- 专利标题（中）： 场效应晶体管具有位于平面升高表面处的控制和电流电极以及形成方法
-
申请号： US767964申请日： 1991-09-30
-
公开(公告)号： US5158901A公开(公告)日： 1992-10-27
- 发明人: Yasunobu Kosa , W. Craig McFadden , Keith E. Witek
- 申请人： Yasunobu Kosa , W. Craig McFadden , Keith E. Witek
- 申请人地址： IL Schaumburg
- 专利权人： Motorola, Inc.
- 当前专利权人： Motorola, Inc.
- 当前专利权人地址： IL Schaumburg
- 主分类号： H01L21/266
- IPC分类号： H01L21/266 ; H01L21/336 ; H01L21/8234 ; H01L21/8238 ; H01L29/08 ; H01L29/423 ; H01L29/78
摘要：
A field effect transistor having regions (20, 20', and 20") which respectively function as a planar elevated surface for gate, drain, and source electrical contact, and method of fabrication. The transistor overlies a substrate (12) and is formed partially from active areas (14 and 14'). The regions (20, 20', and 20"), each underlie or are surrounded by a dielectric layer (22). A gate is formed by a gate layer (24). A source (30) is formed within region (20") and is electrically connected to active area (14'). A drain (30') and channel region are formed within region (20'). Electrical contact is made to the source (30), drain (30') and gate layer (24) by conductive layers (34", 34', and 34, respectively).
公开/授权文献
- US4726199A Superconducting apparatus 公开/授权日：1988-02-23
信息查询
IPC分类:
