发明授权
- 专利标题： Multi-layered interconnection structure for a semiconductor device and manufactured method thereof
- 专利标题（中）： 半导体器件的多层互连结构及其制造方法
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申请号： US727032申请日： 1991-07-08
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公开(公告)号： US5162262A公开(公告)日： 1992-11-10
- 发明人: Natsuo Ajika , Hideaki Arima
- 申请人： Natsuo Ajika , Hideaki Arima
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX1-63066 19890314; JPX1-250890 19890927
- 主分类号： H01L21/285
- IPC分类号： H01L21/285 ; H01L21/321 ; H01L21/768 ; H01L23/532 ; H01L29/45
摘要：
An interconnection layer of a semiconductor device according to the present invention has in a contact portion with a conductor layer a multi-layered structure formed from the bottom, of a refractory metal silicide layer, a first refractory metal nitride layer, and a secondary refractory metal nitride layer. Titanium or tungsten is used as a refractory metal. The second refractory metal nitride is formed by thermally nitriding the refractory metal layer. The second refractory metal nitride layer formed by the thermal process has a close packed crystal structure and has an excellent barrier characteristic.
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