发明授权
- 专利标题: Writable analog reference voltage storage device
- 专利标题(中): 可写模拟参考电压存储器件
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申请号: US697410申请日: 1991-05-09
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公开(公告)号: US5166562A公开(公告)日: 1992-11-24
- 发明人: Timothy P. Allen , Adam K. Greenblatt , Carver A. Mead , Janeen D. W. Anderson
- 申请人: Timothy P. Allen , Adam K. Greenblatt , Carver A. Mead , Janeen D. W. Anderson
- 申请人地址: CA San Jose
- 专利权人: Synaptics, Incorporated
- 当前专利权人: Synaptics, Incorporated
- 当前专利权人地址: CA San Jose
- 主分类号: G05F1/46
- IPC分类号: G05F1/46 ; G05F3/24 ; G11C5/14 ; G11C11/56 ; G11C27/00
摘要:
A circuit for generating N analog voltage signals for reference or bias use employs N analog floating gate storage devices. Electron injection circuitry is provided for injecting electrons on to and a tunneling structure is provided for removing electrons from the floating gate of each floating gate storage device. A follower amplifier is connected to each floating gate storage device and drives an analog output voltage bus. A capacitor is connected to each analog output storage bus. An analog pass gate is connected between each analog output voltage bus and a common monitor/dynamic load bus. Each analog pass gate is driven by a strobe signal.
公开/授权文献
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