发明授权
- 专利标题: Method for producing transparent conductive films
- 专利标题(中): 生产透明导电膜的方法
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申请号: US660840申请日: 1991-02-26
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公开(公告)号: US5180476A公开(公告)日: 1993-01-19
- 发明人: Satoru Ishibashi , Kyuzo Nakamura , Yasushi Higuchi , Takashi Komatsu , Yuzo Murata , Yoshifumi Ota
- 申请人: Satoru Ishibashi , Kyuzo Nakamura , Yasushi Higuchi , Takashi Komatsu , Yuzo Murata , Yoshifumi Ota
- 申请人地址: JPX Chigasaki
- 专利权人: Nihon Shinku Gijutsu Kabushiki Kaisha
- 当前专利权人: Nihon Shinku Gijutsu Kabushiki Kaisha
- 当前专利权人地址: JPX Chigasaki
- 优先权: JPX2-44558 19900227
- 主分类号: C23C14/08
- IPC分类号: C23C14/08 ; C23C14/34 ; C23C14/35 ; H01L21/203 ; H01L21/285
摘要:
A method of producing by sputtering an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O based transparent conductive film according to the present invention uses the addition of a donor element, if needed. The sputtering is carried out by maintaining an intensity of a magnetic field on a surface of a target at 600 Oe or greater as well as by charging the target with a DC electric field superimposed by an RF electric field. An apparatus for producing an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O base transparent conductive film uses the addition of a donor element, if needed. The apparatus has a vacuum chamber adapted to support therein a substrate and a target in an opposed relationship for forming by sputtering the transparent conductive film on the substrate by plasma discharge generated therebetween. The apparatus has a device for forming a magnetic field having a predetermined intensity of 600 Oe or greater on a surface of the target, a DC power supply for charging the target with a DC electric field, and an RF power supply for charging the target with an RF electric field superimposed on the DC electric field.
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