An integrated semiconductor memory of the DRAM type includes word lines and bit line pairs. Memory cells in a matrix are connected to the word lines and the bit lines. One evaluator circuit per bit line pair is connected to the bit lines. Each of the bit line pairs is divided into one bit line and one reference bit line during operation. A control line is provided. At least one coupling capacitor is provided for each of the bit lines and each of the reference bit lines having a first lead connected to the bit line pair and a second lead connected to the control line. A method for testing an integrated semiconductor memory of the DRAM type includes reading data stored in memory cells out of the memory cells, precharging bit line pairs to a precharge level before reading out, and feeding an additional potential to each bit line pair after precharging.