发明授权
- 专利标题： Method of manufacturing high density silicon nitride sintered bodies
- 专利标题（中）： 制造高密度氮化硅烧结体的方法
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申请号： US747439申请日： 1991-08-14
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公开(公告)号： US5194201A公开(公告)日： 1993-03-16
- 发明人: Shinichi Miwa , Seiichi Asami , Takehiro Kajihara
- 申请人： Shinichi Miwa , Seiichi Asami , Takehiro Kajihara
- 申请人地址： JPX
- 专利权人： NGK Insulators, Ltd.
- 当前专利权人： NGK Insulators, Ltd.
- 当前专利权人地址： JPX
- 优先权： JPX63-327988 19881227
- 主分类号： C04B35/584
- IPC分类号： C04B35/584 ; C04B35/58
摘要：
A method of manufacturing silicon nitride sintered bodies comprising the steps of preparing a powder consisting essentially of 100 parts by weight of silicon nitride, 2.about.15 parts by weight of a rare earth element, 0.5.about.15 parts by weight of a Zr compound and 0.3.about.5 parts by weight of SiC, molding the thus prepared powder and firing the resulting molding.
公开/授权文献
- US5785215A Drawstring restringing apparatus 公开/授权日：1998-07-28
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