发明授权
- 专利标题： Method for manufacturing BICMOS devices
- 专利标题（中）： 制造BICMOS器件的方法
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申请号： US874612申请日： 1992-04-27
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公开(公告)号： US5196356A公开(公告)日： 1993-03-23
- 发明人: Tae Y. Won , Moon H. Kim , Kwang D. Yoo , Ji H. Yoo
- 申请人： Tae Y. Won , Moon H. Kim , Kwang D. Yoo , Ji H. Yoo
- 申请人地址： KRX Suweon
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KRX Suweon
- 优先权： KRX91-20269 19911114
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L21/8249
摘要：
A method for BICMOS devices is disclosed, wherein an emitter and a base of a vertical PNP transistor are self-aligned, an extrinsic base is formed by adapting a base electrode polysilicon layer as a diffusion source, and the base electrode and an intrinsic base are coupled by diffusion of N type impurities adapting the N.sup.+ polysilicon as a diffusion source, so that the manufacturing process is simplified and the resistance of the extrinsic base is reduced.
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