公开(公告)号：US5196356A

公开(公告)日：1993-03-23

申请号：US874612

申请日：1992-04-27

申请人： Tae Y. Won ,  Moon H. Kim ,  Kwang D. Yoo ,  Ji H. Yoo

发明人： Tae Y. Won ,  Moon H. Kim ,  Kwang D. Yoo ,  Ji H. Yoo

IPC分类号： H01L27/06 ,  H01L21/8249

CPC分类号： H01L21/8249 ,  Y10S148/009

摘要： A method for BICMOS devices is disclosed, wherein an emitter and a base of a vertical PNP transistor are self-aligned, an extrinsic base is formed by adapting a base electrode polysilicon layer as a diffusion source, and the base electrode and an intrinsic base are coupled by diffusion of N type impurities adapting the N.sup.+ polysilicon as a diffusion source, so that the manufacturing process is simplified and the resistance of the extrinsic base is reduced.

摘要翻译： 公开了一种用于BICMOS器件的方法，其中垂直PNP晶体管的发射极和基极是自对准的，通过使基极多晶硅层适应扩散源形成非本征基极，并且基极和本征基极 通过使N型多晶硅适应扩散源的N型杂质的扩散耦合，使得制造工艺简化，并且外部基极的电阻降低。