发明授权
- 专利标题： Method of manufacturing electric devices
- 专利标题（中）： 制造电气设备的方法
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申请号： US567352申请日： 1990-08-15
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公开(公告)号： US5196366A公开(公告)日： 1993-03-23
- 发明人: Shunpei Yamazaki , Kenji Itoh , Masaya Kadono , Naoki Hirose
- 申请人： Shunpei Yamazaki , Kenji Itoh , Masaya Kadono , Naoki Hirose
- 申请人地址： JPX Kanagawa
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JPX Kanagawa
- 优先权： JPX1-211801 19890817
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L33/00
摘要：
A method of manufacturing electric devices is described. Discrete single crystals are formed on a substrate to be coated. The formation of these crystals is carried out by forming discrete crystallization centers in the surface of the substrate and growing a single crystal from each center. The spaces separating these crystals are filled with an insulating material in order not to form short current paths therein. The top surfaces of the crystals are exposed in order to make contact with an upper electrode.
公开/授权文献
- US4574027A Device for affixing adhesive labels to objects 公开/授权日：1986-03-04
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