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公开(公告)号：US08658481B2
公开(公告)日：2014-02-25
申请号：US13608507
申请日：2012-09-10
IPC分类号： H01L21/00
CPC分类号： H01L27/1222 , H01L23/10 , H01L27/1214 , H01L27/1248 , H01L27/127 , H01L27/1274 , H01L27/1288 , H01L27/3258 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L51/5253 , H01L51/5259 , H01L2924/0002 , H01L2924/00
摘要： A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.
摘要翻译： 在使用TFT的半导体器件中获得TFT中的污染杂质的减少和可靠的TFT。 通过使用含氟溶液除去存在于TFT的膜界面中的污染性杂质，可以获得可靠的TFT。
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公开(公告)号：US20130001582A1
公开(公告)日：2013-01-03
申请号：US13608582
申请日：2012-09-10
IPC分类号： H01L29/786
CPC分类号： H01L27/1222 , H01L23/10 , H01L27/1214 , H01L27/1248 , H01L27/127 , H01L27/1274 , H01L27/1288 , H01L27/3258 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L51/5253 , H01L51/5259 , H01L2924/0002 , H01L2924/00
摘要： A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.
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公开(公告)号：US20080305569A1
公开(公告)日：2008-12-11
申请号：US12174124
申请日：2008-07-16
IPC分类号： H01L21/00
CPC分类号： H01L27/1222 , H01L23/10 , H01L27/1214 , H01L27/1248 , H01L27/127 , H01L27/1274 , H01L27/1288 , H01L27/3258 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L51/5253 , H01L51/5259 , H01L2924/0002 , H01L2924/00
摘要： A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.
摘要翻译： 在使用TFT的半导体器件中获得TFT中的污染杂质的减少和可靠的TFT。 通过使用含氟溶液除去存在于TFT的膜界面中的污染性杂质，可以获得可靠的TFT。
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公开(公告)号：US5609774A
公开(公告)日：1997-03-11
申请号：US194571
申请日：1994-02-10
申请人： Shunpei Yamazaki , Masaya Kadono , Kenji Itoh , Toru Takayama , Yasuyuki Arai , Noriya Ishida
发明人： Shunpei Yamazaki , Masaya Kadono , Kenji Itoh , Toru Takayama , Yasuyuki Arai , Noriya Ishida
IPC分类号： H01J37/32 , H01L21/302
CPC分类号： H01J37/32449 , H01J37/32192 , H01J37/3244
摘要： A microwave-assisted plasma processing apparatus has a reaction chamber in which a substrate holder is provided to support a substrate to be treated. The holder is formed congruent with the inside of reaction chamber and located to substantially separate a reaction space in the reaction chamber save for a narrow clearance therebetween through which exhausted gas passes from said reaction space into said auxiliary space. By this structure, high density plasmas can be formed in the reaction chamber without substantial loss of input microwave energy.
摘要翻译： 微波辅助等离子体处理装置具有反应室，在该反应室中设置有用于支撑被处理基板的基板支架。 保持器与反应室的内部形成一致并且被设置为基本上分离反应室中的反应空间，除了其间的窄间隙，排出的气体从所述反应空间通过所述反应空间进入所述辅助空间。 通过这种结构，可以在反应室中形成高密度等离子体，而不会大量损失输入的微波能量。
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公开(公告)号：US20130005094A1
公开(公告)日：2013-01-03
申请号：US13608507
申请日：2012-09-10
IPC分类号： H01L21/322 , H01L21/336
CPC分类号： H01L27/1222 , H01L23/10 , H01L27/1214 , H01L27/1248 , H01L27/127 , H01L27/1274 , H01L27/1288 , H01L27/3258 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L51/5253 , H01L51/5259 , H01L2924/0002 , H01L2924/00
摘要： A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.
摘要翻译： 在使用TFT的半导体器件中获得TFT中的污染杂质的减少和可靠的TFT。 通过使用含氟溶液除去存在于TFT的膜界面中的污染性杂质，可以获得可靠的TFT。
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公开(公告)号：US08274083B2
公开(公告)日：2012-09-25
申请号：US13005728
申请日：2011-01-13
IPC分类号： H01L29/00 , H01L31/036
CPC分类号： H01L27/1222 , H01L23/10 , H01L27/1214 , H01L27/1248 , H01L27/127 , H01L27/1274 , H01L27/1288 , H01L27/3258 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L51/5253 , H01L51/5259 , H01L2924/0002 , H01L2924/00
摘要： A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.
摘要翻译： 在使用TFT的半导体器件中获得TFT中的污染杂质的减少和可靠的TFT。 通过使用含氟溶液除去存在于TFT的膜界面中的污染性杂质，可以获得可靠的TFT。
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公开(公告)号：US5397558A
公开(公告)日：1995-03-14
申请号：US93973
申请日：1993-07-02
CPC分类号： C30B25/105
摘要： A CVD method for forming a diamond or diamond containing carbon film comprises the step of inputting a reactive gas, supplying energy to the reactive gas, and depositing the carbon film on a substrate. The reactive gas includes a carbon compound material which has a diamond structure in its molecular structure. The representative material is adamantane. Oxygen or hydroxyl group is also added in order to improve the crystallinity of the deposited carbon film.
摘要翻译： 用于形成含有金刚石或金刚石的碳膜的CVD方法包括输入反应气体，向反应气体供应能量并将碳膜沉积在基底上的步骤。 反应性气体包括其分子结构中具有金刚石结构的碳化合物材料。 代表性材料是金刚烷 为了提高沉积碳膜的结晶度，也加入氧或羟基。
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公开(公告)号：US5360477A
公开(公告)日：1994-11-01
申请号：US24948
申请日：1993-03-02
申请人： Tohru Inoue , Masaya Kadono , Akiharu Miyanaga
发明人： Tohru Inoue , Masaya Kadono , Akiharu Miyanaga
CPC分类号： C01B31/06 , B01J19/123 , B01J3/062 , B01J3/065 , C30B1/12 , C30B29/02 , B01J2203/0615 , B01J2203/0625 , B01J2203/0655 , B01J2203/068 , Y10S117/904
摘要： A process for fabricating diamond from a starting powder material containing carbon as the principal component, and said process comprising bringing said powder material under high pressure, wherein, said powder material containing carbon as the principal component is a powder material containing C.sub.60 and/or carbon microtubules as the principal component, andsaid powder material is brought under high pressure by applying a gradient pressure to the material, while the portion of the powder material to which maximum pressure is applied is irradiated by a laser beam optionally through a diamond window material. An apparatus for fabricating diamond is also described.
摘要翻译： 一种从含有碳作为主要成分的起始粉末材料制造金刚石的方法，所述方法包括使所述粉末材料在高压下进行，其中所述含有碳为主要成分的粉末材料是含有C 60和/或碳的粉末材料 微管作为主要成分，并且通过对材料施加梯度压力使所述粉末材料处于高压下，同时施加最大压力的粉末材料部分可以通过激光束任选地通过金刚石窗材料照射。 还描述了一种用于制造金刚石的装置。
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公开(公告)号：US5302226A
公开(公告)日：1994-04-12
申请号：US892710
申请日：1992-05-29
申请人： Shunpei Yamazaki , Naoki Hirose , Masaya Kadono , Kenji Itoh , Toru Takayama , Yasuyuki Arai , Noriya Ishida
发明人： Shunpei Yamazaki , Naoki Hirose , Masaya Kadono , Kenji Itoh , Toru Takayama , Yasuyuki Arai , Noriya Ishida
CPC分类号： H01J37/32449 , H01J37/32192 , H01J37/3244
摘要： A microwave-assisted plasma processing apparatus has a reaction chamber in which a substrate holder is provided to support a substrate to be treated. The holder is formed congruent with the inside of reaction chamber and located to substantially separate a reaction space in the reaction chamber save for a narrow clearance therebetween through which exhausted gas passes from said reaction space into said auxiliary space. By this structure, high density plasmas can be formed in the reaction chamber without substantial loss of input microwave energy.
摘要翻译： 微波辅助等离子体处理装置具有反应室，在该反应室中设置有用于支撑被处理基板的基板支架。 保持器与反应室的内部形成一致并且被设置为基本上分离反应室中的反应空间，除了其间的窄间隙，排出的气体从所述反应空间通过所述反应空间进入所述辅助空间。 通过这种结构，可以在反应室中形成高密度等离子体，而不会大量损失输入的微波能量。
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公开(公告)号：US5185179A
公开(公告)日：1993-02-09
申请号：US417311
申请日：1989-10-05
申请人： Shunpei Yamazaki , Shigenori Hayashi , Noriya Ishida , Mari Sasaki , Junichi Takeyama , Kenji Itou , Masahiro Kojima , Masaya Kadono
发明人： Shunpei Yamazaki , Shigenori Hayashi , Noriya Ishida , Mari Sasaki , Junichi Takeyama , Kenji Itou , Masahiro Kojima , Masaya Kadono
CPC分类号： C23C16/345 , C23C16/26
摘要： Carbonaceous films are coated on a surface by chemical vapor reation. In advance of the deposition of carbonaceous film, a silicon nitride film as coated on the surface to prevent interdiffusion between the carbonaceous film and the underlying surface.
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