发明授权
US5200232A Reaction chamber design and method to minimize particle generation in
chemical vapor deposition reactors
失效
化学蒸气沉积反应器中反应室设计和最小化颗粒生成的方法
- 专利标题: Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors
- 专利标题(中): 化学蒸气沉积反应器中反应室设计和最小化颗粒生成的方法
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申请号: US623090申请日: 1990-12-11
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公开(公告)号: US5200232A公开(公告)日: 1993-04-06
- 发明人: James E. Tappan , Arthur K. Yasuda , Dean R. Denison , Randall S. Mundt
- 申请人: James E. Tappan , Arthur K. Yasuda , Dean R. Denison , Randall S. Mundt
- 申请人地址: CA Fremont
- 专利权人: Lam Research Corporation
- 当前专利权人: Lam Research Corporation
- 当前专利权人地址: CA Fremont
- 主分类号: H01L21/205
- IPC分类号: H01L21/205 ; C23C16/44 ; C23C16/513 ; H01J37/32
摘要:
A method of controlling deposition quality of line-of-sight and specimen surrounding surfaces in a plasma-enhanced chemical vapor deposition apparatus. Adhesion and integrity of deposited film on the surfaces is improved by one or more of (1) avoiding differential thermal expansion of the film and the underlying surfaces, (2) controlling geometry of the surfaces to eliminate edges which generate stress in the deposited film, and (3) using material for the surface which provides strong adhesion of the deposited film. For instance, differential thermal expansion can be avoided by maintaining the surfaces at a substantially constant temperature such as ambient temperature.
公开/授权文献
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