发明授权
- 专利标题: Chemical vapor deposition apparatus for forming thin film
- 专利标题(中): 用于形成薄膜的化学气相沉积设备
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申请号: US875424申请日: 1992-04-29
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公开(公告)号: US5209182A公开(公告)日: 1993-05-11
- 发明人: Tomohiro Ohta , Eiichi Kondoh , Tohru Mitomo , Kenichi Otsuka , Hiroshi Sekihashi
- 申请人: Tomohiro Ohta , Eiichi Kondoh , Tohru Mitomo , Kenichi Otsuka , Hiroshi Sekihashi
- 申请人地址: JPX Kobe
- 专利权人: Kawasaki Steel Corporation
- 当前专利权人: Kawasaki Steel Corporation
- 当前专利权人地址: JPX Kobe
- 优先权: JPX1-312509 19891201; JPX2-39495 19900220
- 主分类号: C23C16/46
- IPC分类号: C23C16/46
摘要:
An apparatus for forming, by a chemical vapor deposition process, a thin film of crystals such as diamond on a surface of a heated substrate placed in a reaction vessel. The apparatus has a substrate supporting structure, a heater for heating the substrate by heat conduction or by electric current supplied directly to the substrate, and a cooling device for cooling the substrate. The heater is controlled in accordance with the measured temperature of the substrate so as to accurately maintain the substrate temperature at a constant level.
公开/授权文献
- US4154252A Device for use in the wrapping of coins 公开/授权日:1979-05-15
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