公开(公告)号：US5225245A

公开(公告)日：1993-07-06

申请号：US568857

申请日：1990-08-17

申请人： Tomohiro Ohta ,  Eiichi Kondoh ,  Tohru Mitomo ,  Kenichi Otsuka ,  Hiroshi Sekihashi

发明人： Tomohiro Ohta ,  Eiichi Kondoh ,  Tohru Mitomo ,  Kenichi Otsuka ,  Hiroshi Sekihashi

IPC分类号： C23C16/46

CPC分类号： C23C16/463 ,  C23C16/46

摘要： An apparatus for forming, by a chemical vapor deposition process, a thin film of crystals such as diamond on a surface of a heated substrate placed in a reaction vessel. The apparatus has a substrate supporting structure, a heater for heating the substrate by heat conduction or by electric current supplied directly to the substrate, and a cooling device for cooling the substrate. The heater is controlled in accordance with the measured temperature of the substrate so as to accurately maintain the substrate temperature at a constant level.

公开(公告)号：US5209182A

公开(公告)日：1993-05-11

申请号：US875424

申请日：1992-04-29

申请人： Tomohiro Ohta ,  Eiichi Kondoh ,  Tohru Mitomo ,  Kenichi Otsuka ,  Hiroshi Sekihashi

发明人： Tomohiro Ohta ,  Eiichi Kondoh ,  Tohru Mitomo ,  Kenichi Otsuka ,  Hiroshi Sekihashi

IPC分类号： C23C16/46

CPC分类号： C23C16/463 ,  C23C16/46

摘要： An apparatus for forming, by a chemical vapor deposition process, a thin film of crystals such as diamond on a surface of a heated substrate placed in a reaction vessel. The apparatus has a substrate supporting structure, a heater for heating the substrate by heat conduction or by electric current supplied directly to the substrate, and a cooling device for cooling the substrate. The heater is controlled in accordance with the measured temperature of the substrate so as to accurately maintain the substrate temperature at a constant level.

摘要翻译： 一种用于通过化学气相沉积工艺在放置在反应容器中的加热衬底的表面上形成诸如金刚石的晶体薄膜的装置。 该装置具有基板支撑结构，用于通过热传导加热基板的加热器或直接供应到基板的电流，以及用于冷却基板的冷却装置。 根据基板的测量温度来控制加热器，以便将基板温度准确地维持在恒定水平。

公开(公告)号：US5308651A

公开(公告)日：1994-05-03

申请号：US973058

申请日：1992-11-06

申请人： Tomohiro Ohta ,  Hiroaki Sasaki ,  Tohru Mitomo ,  Naoki Kubota

发明人： Tomohiro Ohta ,  Hiroaki Sasaki ,  Tohru Mitomo ,  Naoki Kubota

IPC分类号： C23C16/48 ,  H01L21/268 ,  B05D3/06

CPC分类号： H01L21/268 ,  C23C16/483

摘要： As to technical subject matters of attempting increase of deposition rate and improvement of film quality and removing restriction of light source and source gas in the photo CVD process, the promotion of photolysis of the source gas is achieved by use of a pulse laser beam together with a continuous light, application of plural laser beams wherein each pulse of at least one second pulse laser beam is irradiated into each interval between a pulse and the next pulse in a first lase beam, and further introduction of an additive gas in addition to the source gas into a reaction vessel and particularly the provision of photo CVD process advantageously adaptable for the production of semiconductor is realized.

摘要翻译： 关于在光CVD法中试图提高沉积速率和提高膜质量以及去除光源和源气体的限制的技术主题，通过使用脉冲激光束和 连续的光，应用多个激光束，其中至少一个第二脉冲激光束的每个脉冲被照射在第一激光束中的脉冲和下一个脉冲之间的每个间隔中，并且除了源之外还进一步引入添加气体 气体进入反应容器，特别是提供有利于生产半导体的光CVD技术。