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34 条记录 (耗时 0.016 秒)

    Method of chemical mechanical polishing planarization of an insulating film using an etching stop
    3.
    发明授权
    Method of chemical mechanical polishing planarization of an insulating film using an etching stop 失效
    使用蚀刻停止层的绝缘膜的化学机械抛光平面化方法

    公开(公告)号：US5532191A

    公开(公告)日：1996-07-02

    申请号：US216410

    申请日：1994-03-23

    申请人： Tadashi Nakano ,  Nobuyoshi Sato ,  Tomohiro Ohta ,  Hiroshi Yamamoto

    发明人： Tadashi Nakano ,  Nobuyoshi Sato ,  Tomohiro Ohta ,  Hiroshi Yamamoto

    IPC分类号： H01L21/3105

    CPC分类号： H01L21/31053

    摘要： A method of planarizing an insuating film includes the steps of preparing a semiconductor substrate; treating an uneven surface of the substrate with an organic solvent; forming an insulating film on the thus-treated surface of the substrate by a chemical vapor deposition using an organic silicon compound as a raw material or depositing SOG, forming an etching stop film having a chemical mechanical polishing etching speed slower than that of the insulating film by depositing silicon oxide or silicon oxynitride by performing a chemical vapor deposition using an inorganic silicon compound as a raw material; and etching back at least a part of the insulating film formed on the uneven surface of the substrate by a chemical mechanical polishing process using the etching stop film.

    摘要翻译： 平版化绝缘膜的方法包括制备半导体衬底的步骤; 用有机溶剂处理基板的不平坦表面; 通过使用有机硅化合物作为原料的化学气相沉积或沉积SOG在基板的这样处理的表面上形成绝缘膜，形成化学机械抛光蚀刻速度比绝缘膜慢的蚀刻停止膜 通过使用无机硅化合物作为原料进行化学气相沉积来沉积氧化硅或氮氧化硅; 并且通过使用该蚀刻停止膜的化学机械抛光工艺来蚀刻形成在基板的不平坦表面上的绝缘膜的至少一部分。

    Photochemical vapor deposition process
    4.
    发明授权
    Photochemical vapor deposition process 失效
    光化学气相沉积工艺

    公开(公告)号：US5308651A

    公开(公告)日：1994-05-03

    申请号：US973058

    申请日：1992-11-06

    申请人： Tomohiro Ohta ,  Hiroaki Sasaki ,  Tohru Mitomo ,  Naoki Kubota

    发明人： Tomohiro Ohta ,  Hiroaki Sasaki ,  Tohru Mitomo ,  Naoki Kubota

    IPC分类号： C23C16/48 ,  H01L21/268 ,  B05D3/06

    CPC分类号： H01L21/268 ,  C23C16/483

    摘要： As to technical subject matters of attempting increase of deposition rate and improvement of film quality and removing restriction of light source and source gas in the photo CVD process, the promotion of photolysis of the source gas is achieved by use of a pulse laser beam together with a continuous light, application of plural laser beams wherein each pulse of at least one second pulse laser beam is irradiated into each interval between a pulse and the next pulse in a first lase beam, and further introduction of an additive gas in addition to the source gas into a reaction vessel and particularly the provision of photo CVD process advantageously adaptable for the production of semiconductor is realized.

    摘要翻译： 关于在光CVD法中试图提高沉积速率和提高膜质量以及去除光源和源气体的限制的技术主题，通过使用脉冲激光束和 连续的光，应用多个激光束，其中至少一个第二脉冲激光束的每个脉冲被照射在第一激光束中的脉冲和下一个脉冲之间的每个间隔中，并且除了源之外还进一步引入添加气体 气体进入反应容器，特别是提供有利于生产半导体的光CVD技术。

    Sprinkler head and operation monitor therefor
    5.
    发明授权
    Sprinkler head and operation monitor therefor 失效
    喷头和操作监视器

    公开(公告)号：US5117916A

    公开(公告)日：1992-06-02

    申请号：US682664

    申请日：1991-04-09

    申请人： Tomohiro Ohta ,  Takahiro Nakajima

    发明人： Tomohiro Ohta ,  Takahiro Nakajima

    IPC分类号： A62C37/10 ,  A62C37/21 ,  A62C37/50 ,  G08B17/02

    CPC分类号： G08B17/02 ,  A62C37/10 ,  A62C37/21 ,  A62C37/50

    摘要： A sprinkler head of the present invention comprises a cover plate which is operated to fall down at a temperature lower than the operating temperature of the sprinkler head body and a switching unit provided on the body side of the sprinkler head so as to detect the falling of the cover plate and send a fire detection signal.A sprinkler head comprises a switching unit provided on the side of the sprinkler head body so as to send a fire detection signal when the unit is operated at a temperature lower than the operating temperature of the sprinkler head and send a sprinkler head operation signal when it is returned to a non-operating state by detection of the firewater discharged by the operation of the sprinkler head after the fire detection signal has been sent.An operation monitor for the sprinkler head of the present invention decides that the sprinkler head is operated and indicates the operation when it receives a sprinkler head operation signal from a switching unit provided on the sprinkler head and a detection signal from a water flow detector provided on piping extending to the sprinkler head.The structure in which the sprinkler head also serves as a fire detector enables a reduction of the cost of fire extinguishing equipment and the simplification of the installation work thereof, as well as an improvement in the appearance. It is also possible to detect the discharge of water from the sprinkler head without giving false information.

    摘要翻译： 本发明的喷水头包括盖板，该盖板在比喷洒头主体的操作温度低的温度下操作，以及设置在喷头的主体侧的切换单元，以便检测喷洒头的下落 盖板发送火灾探测信号。 喷洒头包括设置在喷头主体一侧的开关单元，以便当该单元在比喷洒头的操作温度低的温度下操作时发送火情检测信号，并且当喷头 在发送火灾检测信号之后，通过检测喷洒头的操作而排出的消防水，返回到非操作状态。 本发明的喷洒头的操作监视器判定喷洒头被操作并且当接收到来自设置在喷洒头上的切换单元的喷洒头操作信号和来自设置在喷洒头上的水流检测器的检测信号时，指示操作 管道延伸到喷头。 喷淋头也用作火灾探测器的结构能够降低灭火设备的成本和简化其安装工作以及外观的改善。 也可以在不给出虚假信息的情况下从喷头读出水分。

    Semiconductor device
    6.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US07476619B2

    公开(公告)日：2009-01-13

    申请号：US10543378

    申请日：2003-12-26

    申请人： Eiichi Kondoh ,  Vincent Vezin ,  Kenichi Kubo ,  Yoshinori Kureishi ,  Tomohiro Ohta

    发明人： Eiichi Kondoh ,  Vincent Vezin ,  Kenichi Kubo ,  Yoshinori Kureishi ,  Tomohiro Ohta

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76843 ,  H01L21/28556 ,  H01L21/76862

    摘要： An object of the invention is to make it possible to perform the embedding of a Cu diffusion preventing film and a Cu film to a fine pattern of a high aspect ratio by using a medium of a supercritical state in a manufacturing process of a semiconductor device. The object of the invention is achieved by a substrate processing method comprising a first step of processing a substrate by supplying a first processing medium containing a first medium of a supercritical state onto the substrate, a second step of forming a Cu diffusion preventing film on the substrate by supplying a second processing medium containing a second medium of a supercritical state onto the substrate, and a third step of forming a Cu film on the substrate by supplying a third processing medium containing a third medium of a supercritical state onto the substrate.

    摘要翻译： 本发明的目的是通过在半导体器件的制造工艺中使用超临界状态的介质，可以将Cu扩散防止膜和Cu膜嵌入到高纵横比的精细图案中。 本发明的目的是通过一种基板处理方法实现的，该方法包括：第一步骤，通过将含有超临界状态的第一介质的第一处理介质提供到基板上来处理基板;第二步骤，在所述基板上形成Cu扩散防止膜 通过将含有超临界状态的第二介质的第二处理介质供给到所述基板上，以及通过将含有超临界状态的第三介质的第三处理介质供给到所述基板上而在所述基板上形成Cu膜的第三工序来进行。

    Multilevel interconnect structure
    9.
    发明授权
    Multilevel interconnect structure 失效
    多层互连结构

    公开(公告)号：US5627345A

    公开(公告)日：1997-05-06

    申请号：US198788

    申请日：1994-02-18

    申请人： Hiroshi Yamamoto ,  Tomohiro Ohta ,  Nobuyuki Takeyasu

    发明人： Hiroshi Yamamoto ,  Tomohiro Ohta ,  Nobuyuki Takeyasu

    IPC分类号： H01L23/522 ,  H01L23/532 ,  H05K1/09 ,  H05K1/14

    CPC分类号： H01L21/76852 ,  H01L21/76885 ,  H01L23/5226 ,  H01L23/53223 ,  H01L2924/0002 ,  Y10T29/49126 ,  Y10T29/49165

    摘要： A multilevel interconnect structure for use in a semiconductor device includes a lower metal wiring having an aluminum or aluminum alloy film and a high melting point metal or high melting point metal alloy film. An interlayer insulating film is deposited on the lower metal wiring and a via hole is formed in the interlayer insulating film. A plug made of aluminum or aluminum alloy is formed in the via hole. An upper metal wiring has an aluminum or aluminum alloy film and a high melting point metal or high melting point metal alloy film. The plug directly contacts the aluminum or aluminum alloy film of at least one of the lower and upper metal wirings to decrease the via resistance without reducing the electromigration reliability.

    摘要翻译： 用于半导体器件的多层互连结构包括具有铝或铝合金膜和高熔点金属或高熔点金属合金膜的下金属布线。 层间绝缘膜沉积在下金属布线上，并且在层间绝缘膜中形成通孔。 在通孔中形成由铝或铝合金制成的塞子。 上金属布线具有铝或铝合金膜和高熔点金属或高熔点金属合金膜。 插头直接接触下部和上部金属布线中的至少一个的铝或铝合金膜以降低通孔电阻而不降低电迁移可靠性。