发明授权
- 专利标题： Method of manufacturing semiconductor substrate dielectric isolating structure
- 专利标题（中）： 制造半导体衬底绝缘隔离结构的方法
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申请号： US845359申请日： 1992-03-06
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公开(公告)号： US5213993A公开(公告)日： 1993-05-25
- 发明人: Masanobu Ogino , Tsutomu Amai , Takanobu Kamakura
- 申请人： Masanobu Ogino , Tsutomu Amai , Takanobu Kamakura
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Tobisha
- 当前专利权人： Kabushiki Kaisha Tobisha
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX1-237457 19890913; JPX2-175527 19900703
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/762
摘要：
A manufacturing method of this invention improves nonuniformity in film thickness of a circuit element formation region produced due to a poor flatness of a semiconductor substrate in the manufacture of a semiconductor substrate having a dielectric isolating structure. Mirror-polished surfaces of first and second semiconductor substrates are opposed and bonded to each other so as to sandwich a dielectric having a predetermined thickness, and the first semiconductor substrate is ground from the surface opposite to the adhesion surface to have a predetermined thickness with reference to the dielectric. An impurity is doped in the first semiconductor substrate to form a high-concentration impurity layer having an impurity concentration corresponding to a predetermined low-concentration impurity layer having a predetermined thickness thereon, thereby constituting a circuit element region. This invention is a method of manufacturing a semiconductor substrate, which improves film thickness precision of each circuit element formation layer for forming a circuit element.
公开/授权文献
- USD291947S Case for writing instruments 公开/授权日：1987-09-22