公开(公告)号：US5096839A

公开(公告)日：1992-03-17

申请号：US693035

申请日：1991-04-30

申请人： Tsutomu Amai ,  Masanobu Ogino

发明人： Tsutomu Amai ,  Masanobu Ogino

IPC分类号： C30B29/06 ,  C30B33/02 ,  H01L21/322

CPC分类号： C30B33/02 ,  C30B29/06 ,  H01L21/3225 ,  Y10S117/916

摘要： The ratio between variations in the oxygen concentration before and after a silicon wafer is subjected to two types of heat treatments in which the temperatures and processing times are different is defined. The silicon wafer is subjected to a first heat treatment, and the interstitial oxygen concentrations before and after the first heat treatment are respectively set to [Oi].sub.1ini and [Oi].sub.1af. The silicon wafer is successively subjected to second and third heat treatments, and the interstitial oxygen concentrations before and after the second and third heat treatments are respectively set to [Oi].sub.2ini and [Oi].sub.2af. At this time, the interstitial oxygen concentrations [Oi].sub.1ini, [Oi].sub.1af, [Oi].sub.2ini and [Oi].sub.2af are so set as to satisfy the condition that ([Oi].sub.2ini -[Oi].sub.2af)/[Oi].sub.1ini -[Oi].sub.1af).gtoreq.20.

摘要翻译： 硅晶片之前和之后的氧浓度变化之间的比率被定义为其中温度和加工时间不同的两种热处理。 对硅晶片进行第一热处理，并且将第一热处理前后的间隙氧浓度分别设定为] 1ini和]1af。 硅晶片依次进行第二和第三热处理，第二和第三热处理之前和之后的间隙氧浓度分别设定为O 2ini和O 2af。 此时，间隙氧浓度] 1ini，]1af，]2ini和]2af被设定为满足条件：（] 2ii-]2af）/ [Oi ] 1ini- [Oi] 1af）> = = 20。

公开(公告)号：US5731247A

公开(公告)日：1998-03-24

申请号：US498755

申请日：1995-07-06

申请人： Yoshihiro Ueno ,  Tsutomu Amai ,  Shuichi Samata

发明人： Yoshihiro Ueno ,  Tsutomu Amai ,  Shuichi Samata

IPC分类号： H01L21/70 ,  H01L21/02 ,  H01L21/28 ,  H01L21/306 ,  H01L21/316 ,  H01L21/322

CPC分类号： H01L21/28211 ,  H01L21/02046 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02299 ,  H01L21/31662 ,  Y10S438/974

摘要： A method for manufacturing a semiconductor device can reduce a micro-roughness and does not change a construction and electric characteristics of elements formed in the semiconductor device. In the method for manufacturing the semiconductor device including a pre-oxidation process in which an oxide layer is first formed on a silicon wafer, and the oxide layer is secondly eliminated to eliminate impurities on a surface of the silicon wafer, a formation of the oxide layer in the pre-oxidation process is performed in an oxidization atmosphere including H.sub.2 O and gas including germanium hydride (german --GeH.sub.4 --). Since german (GeH.sub.4) is included in the oxidization atmosphere, it is possible to reduce a softening temperature of the silicon dioxide formed in pre-oxidation, thereby decreasing the micro-roughness on the surface of the silicon wafer. Furthermore, since it is possible to perform the pre-oxidation process in a low temperature and in a short time, there is no change of a construction and electric characteristics of elements formed in the semiconductor device.

摘要翻译： 半导体器件的制造方法可以减小微粗糙度，并且不会改变形成在半导体器件中的元件的结构和电特性。 在制造半导体器件的方法中，包括首先在硅晶片上形成氧化物层的预氧化工艺，并且第二次除去氧化物层以消除硅晶片表面上的杂质，形成氧化物 包括H 2 O和包括氢化锗（锗-GeH 4 - ）在内的气体的氧化气氛中进行预氧化处理。 由于锗（GeH 4）被包含在氧化气氛中，所以可以降低在预氧化中形成的二氧化硅的软化温度，从而降低硅晶片表面的微粗糙度。 此外，由于可以在低温和短时间内进行预氧化处理，所以在半导体器件中形成的元件的结构和电特性没有变化。

公开(公告)号：US5213993A

公开(公告)日：1993-05-25

申请号：US845359

申请日：1992-03-06

申请人： Masanobu Ogino ,  Tsutomu Amai ,  Takanobu Kamakura

发明人： Masanobu Ogino ,  Tsutomu Amai ,  Takanobu Kamakura

IPC分类号： H01L21/20 ,  H01L21/762

CPC分类号： H01L21/76264 ,  H01L21/2007 ,  H01L21/76275 ,  H01L21/76286 ,  Y10S148/012 ,  Y10S148/033

摘要： A manufacturing method of this invention improves nonuniformity in film thickness of a circuit element formation region produced due to a poor flatness of a semiconductor substrate in the manufacture of a semiconductor substrate having a dielectric isolating structure. Mirror-polished surfaces of first and second semiconductor substrates are opposed and bonded to each other so as to sandwich a dielectric having a predetermined thickness, and the first semiconductor substrate is ground from the surface opposite to the adhesion surface to have a predetermined thickness with reference to the dielectric. An impurity is doped in the first semiconductor substrate to form a high-concentration impurity layer having an impurity concentration corresponding to a predetermined low-concentration impurity layer having a predetermined thickness thereon, thereby constituting a circuit element region. This invention is a method of manufacturing a semiconductor substrate, which improves film thickness precision of each circuit element formation layer for forming a circuit element.

摘要翻译： 本发明的制造方法由于在具有电介质隔离结构的半导体衬底的制造中由于半导体衬底的平坦度差而产生的电路元件形成区域的膜厚不均匀性。 第一半导体衬底和第二半导体衬底的镜面抛光表面相对并且彼此结合以夹住具有预定厚度的电介质，并且从与粘合表面相对的表面研磨第一半导体衬底以具有参考的预定厚度 到电介质。 在第一半导体衬底中掺杂杂质以形成具有对应于其上具有预定厚度的预定低浓度杂质层的杂质浓度的高浓度杂质层，从而构成电路元件区域。 本发明是制造半导体衬底的方法，其改进了用于形成电路元件的每个电路元件形成层的膜厚精度。