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US5217401A Method of manufacturing a field-emission type switching device 失效
场致发射型开关装置的制造方法

Method of manufacturing a field-emission type switching device
摘要:
A field-emission type switching device includes a substrate formed with a recess having a straight edge and serrated edge opposite to the straight edge. A gate electrode is formed at the bottom of the recess. An emitter electrode is provided over the substrate and formed with a serrated edge which is slightly off alignment with the serrate edge of the recess so as to provide an emitter overhanging portion overhanging the recess. Similarly, a collector electrode is provided over the substrate means and formed with a straight edge which is slightly off alignment with the straight edge of the recess so as to provide a collector overhanging portion overhanging the recess. The emitter and collector electrodes are disposed in one plate and the gate electrode is disposed in another plane below the one plane.
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