发明授权
- 专利标题: Method of manufacturing a field-emission type switching device
- 专利标题(中): 场致发射型开关装置的制造方法
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申请号: US836558申请日: 1992-02-18
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公开(公告)号: US5217401A公开(公告)日: 1993-06-08
- 发明人: Masanori Watanabe , Hiroyuki Kado , Takao Chikamura , Nobuyuki Yoshiike
- 申请人: Masanori Watanabe , Hiroyuki Kado , Takao Chikamura , Nobuyuki Yoshiike
- 申请人地址: JPX Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JPX Osaka
- 优先权: JPX1-175900 19890707
- 主分类号: H01J3/02
- IPC分类号: H01J3/02 ; H01J21/10
摘要:
A field-emission type switching device includes a substrate formed with a recess having a straight edge and serrated edge opposite to the straight edge. A gate electrode is formed at the bottom of the recess. An emitter electrode is provided over the substrate and formed with a serrated edge which is slightly off alignment with the serrate edge of the recess so as to provide an emitter overhanging portion overhanging the recess. Similarly, a collector electrode is provided over the substrate means and formed with a straight edge which is slightly off alignment with the straight edge of the recess so as to provide a collector overhanging portion overhanging the recess. The emitter and collector electrodes are disposed in one plate and the gate electrode is disposed in another plane below the one plane.
公开/授权文献
- US4705270A Portable exercise device 公开/授权日:1987-11-10
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