发明授权
- 专利标题： Method of making Alpha-Ta thin films
- 专利标题（中）： 制造Alpha-Ta薄膜的方法
-
申请号： US910924申请日： 1992-07-09
-
公开(公告)号： US5221449A公开(公告)日： 1993-06-22
- 发明人: Evan G. Colgan , Peter M. Fryer
- 申请人： Evan G. Colgan , Peter M. Fryer
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： C23C14/14
- IPC分类号： C23C14/14 ; H01L21/28 ; H01L21/285 ; H01L21/336 ; H01L21/768
摘要：
The present invention relates generally to a structure and a method of making Alpha-Ta films, and more particularly, to a structure and a method of making Alpha-Ta in thin films. A seed layer of Ta reactively sputtered in a nitrogen containing environment is grown on the substrate, and using this seed layer of Ta(N) layers of Alpha-Ta are then formed.
公开/授权文献
信息查询
IPC分类:
