发明授权
- 专利标题： Method of manufacturing semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US759903申请日： 1991-09-13
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公开(公告)号： US5225036A公开(公告)日： 1993-07-06
- 发明人: Tohru Watanabe , Katsuya Okumura
- 申请人： Tohru Watanabe , Katsuya Okumura
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX63-73628 19880328
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/311 ; H01L21/768
摘要：
A method of and apparatus for manufacturing a semiconductor device are presented wherein a silicon oxide film on an intermediate semiconductor device is etched out properly without damaging the silicon, under the condition that a difference between the etching speeds of silicon and silicon oxide film becomes small, and immediately thereafter another film is formed on the surface of the silicon with the silicon oxide film removed therefrom.