公开(公告)号：US5225036A

公开(公告)日：1993-07-06

申请号：US759903

申请日：1991-09-13

申请人： Tohru Watanabe ,  Katsuya Okumura

发明人： Tohru Watanabe ,  Katsuya Okumura

IPC分类号： H01L21/00 ,  H01L21/311 ,  H01L21/768

CPC分类号： H01L21/67069 ,  H01L21/31116 ,  H01L21/76879

摘要： A method of and apparatus for manufacturing a semiconductor device are presented wherein a silicon oxide film on an intermediate semiconductor device is etched out properly without damaging the silicon, under the condition that a difference between the etching speeds of silicon and silicon oxide film becomes small, and immediately thereafter another film is formed on the surface of the silicon with the silicon oxide film removed therefrom.

摘要翻译： 本发明提供一种制造半导体器件的方法和装置，其中在硅和氧化硅膜的蚀刻速度之间的差异变小的条件下，中间半导体器件上的氧化硅膜被正确蚀刻出去而不损坏硅， 之后立即在硅的表面上形成另一薄膜，从中除去氧化硅膜。

公开(公告)号：US5101259A

公开(公告)日：1992-03-31

申请号：US226472

申请日：1988-08-01

申请人： Tohru Watanabe ,  Katsuya Okumura

发明人： Tohru Watanabe ,  Katsuya Okumura

IPC分类号： H01L21/31 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L23/5328 ,  H01L21/312 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76829 ,  H01L2924/0002 ,  H01L2924/12044

摘要： A semiconductor device includes at least one wiring layer containing aluminum as the major constituent and provided through an insulating film on a semiconductor substrate on which components or elements are formed, and a heat resistant high molecular organic film having a radical of small water absorbing property provided on side surfaces of the wiring layer. The heat resisting high molecular organic film is preferably formed of polyphenylene sulfide. A method of the semiconductor device includes the steps of forming components on a semiconductor substrate, forming an insulating film on the components to form an aluminum wiring layer by deposition and patterning, depositing a heat resistant high molecular organic film having a radical of small water absorbing property, and heating the heat resistant high molecular organic film at a temperature to fluidify to and flatten the heat resistant high molecular organic film.

公开(公告)号：US5067437A

公开(公告)日：1991-11-26

申请号：US329847

申请日：1989-03-28

申请人： Tohru Watanabe ,  Katsuya Okumura

发明人： Tohru Watanabe ,  Katsuya Okumura

IPC分类号： H01L21/316 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/768

CPC分类号： H01L21/67069 ,  H01L21/31116 ,  H01L21/76879 ,  Y10S438/913

摘要： An apparatus for forming a film on the silicon surface of an intermediate semiconductor device, wherein a silicon oxide film on the intermediate semiconductor device is etched out with an active species without damage to the silicon surface, the difference between the etching speeds of the silicon and the silicon oxide film being 5 or less. Immediately after the etching, another film is formed on the surface of the silicon without the surface being exposed to the atmosphere. Thus, the etching of the silicon oxide film and the forming of another film can be performed in the same chamber or different chambers.

公开(公告)号：US4954218A

公开(公告)日：1990-09-04

申请号：US389681

申请日：1989-08-04

申请人： Katsuya Okumura ,  Tohru Watanabe ,  Masami Watase

发明人： Katsuya Okumura ,  Tohru Watanabe ,  Masami Watase

IPC分类号： H01L21/302 ,  H01L21/033 ,  H01L21/208 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/316 ,  H01L21/32 ,  H01L21/3213 ,  H01L21/768 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06 ,  C23F1/02

CPC分类号： H01L21/76838 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/316 ,  H01L21/32 ,  H01L21/32139 ,  H01L21/76802

摘要： A photoresist layer having a prescribed pattern is formed on a substrate to be etched. The substrate is immersed into a predetermined solution to form a layer on the substrate except on those portions where the photoresist layer is formed. The photoresist layer is removed, and the substrate is etched using the remaining layer as a mask.

公开(公告)号：US5314847A

公开(公告)日：1994-05-24

申请号：US768611

申请日：1991-10-18

申请人： Tohru Watanabe ,  Katsuya Okumura

发明人： Tohru Watanabe ,  Katsuya Okumura

IPC分类号： H01L21/28 ,  H01L21/00 ,  H01L21/027 ,  H01L21/20 ,  H01L21/30 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/316 ,  H01L21/321 ,  H01L21/324 ,  H01L21/34 ,  H01L21/768 ,  H01L23/522 ,  H01L21/02

CPC分类号： H01L21/67109 ,  H01L21/02178 ,  H01L21/02244 ,  H01L21/02255 ,  H01L21/2022 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31105 ,  H01L21/31658 ,  H01L21/321 ,  H01L21/324 ,  H01L29/66969

摘要： In order to provide the processing required to prevent a semiconductor substrate from becoming contaminated or damaged, without heating it in a kiln, a combustion flame of a gas that is a mixture of hydrogen and oxygen is applied to the surface of the semiconductor substrate, so that only the substrate surface is heated. Oxidizing or reducing processing can be provided by varying the ratio of hydrogen to oxygen. A device that enables this processing method comprises a first conduit (6) for guiding hydrogen; a second conduit (7) for guiding oxygen; a flame generation means (5) for combusting the hydrogen and the oxygen in a mixed state to generate a downward-pointing flame over a range wider than the diameter of a semiconductor substrate (1) that is being processed; a flow regulation means (8) and (9) provided midway in each of the first tube and the second tube, for regulating the fluid passing through each of the first tube and the second tube; and a conveyor means (2), (3), and (14) for conveying the semiconductor substrate that is being processed, provided below the flame generation means.

摘要翻译： PCT No.PCT / JP91 / 00215 Sec。 371日期1991年10月18日 102（e）日期1991年10月18日PCT 1991年2月20日PCT PCT。 出版物WO91 / 13461 1991年9月5日。为了提供防止半导体衬底被污染或损坏的处理，而不在窑中加热，将作为氢和氧的混合物的气体的燃烧火焰施加到 表面，使得只有基板表面被加热。 可以通过改变氢与氧的比例来提供氧化或还原处理。 实现该处理方法的装置包括用于引导氢的第一导管（6） 用于引导氧气的第二导管（7） 一种用于在混合状态下燃烧氢和氧的火焰产生装置（5），以在比待处理的半导体衬底（1）的直径更宽的范围上产生向下指示的火焰; 设置在第一管和第二管的每一个中间的流量调节装置（8）和（9），用于调节流过第一管和第二管中的每一个的流体; 以及设置在火焰产生装置下方的用于输送被处理的半导体衬底的传送装置（2），（3）和（14）。

公开(公告)号：US4912963A

公开(公告)日：1990-04-03

申请号：US313529

申请日：1989-02-22

申请人： Kazuya Mori ,  Tohru Watanabe ,  Katsuya Okumura

发明人： Kazuya Mori ,  Tohru Watanabe ,  Katsuya Okumura

IPC分类号： B01J19/00 ,  G01M3/26 ,  G01N5/02 ,  H01L21/302

CPC分类号： G01M3/26 ,  G01N5/02

摘要： A method and an apparatus for evaluating the gas purifying ability of a gas purifier are described. The method for evaluating the gas purifying ability comprises the steps of sealing the gas purifier while reducing the inner gas pressure of the gas purifier, releasing a desirable impurity gas shut within a tank at a higher inner gas pressure than the inner gas pressure of the gas purifier, to the sealed gas purifier, and measuring the gas releasing ability of the impurity gas to the gas purifier.

公开(公告)号：US5278104A

公开(公告)日：1994-01-11

申请号：US870240

申请日：1992-04-20

申请人： Masako Kodera ,  Tohru Watanabe ,  Katsuya Okumura

发明人： Masako Kodera ,  Tohru Watanabe ,  Katsuya Okumura

IPC分类号： H01L21/673 ,  H01L21/68 ,  H01L21/306

CPC分类号： H01L21/67326 ,  H01L21/67386 ,  Y10S134/902 ,  Y10S414/135

摘要： A semiconductor device support carrier used for a liquid phase process of a semiconductor device with a process liquid is disclosed. The semiconductor device support carrier comprises a support frame supporting the semiconductor device, and a dust protection plate mounted on the support frame and positioned above the semiconductor device. When the semiconductor device support carrier is drawn up from the process liquid, dust in the process liquid is pushed aside and out of the semiconductor device by the dust protection plate.

摘要翻译： 公开了一种用于具有工艺液体的半导体器件的液相工艺的半导体器件支撑载体。 半导体器件支撑载体包括支撑半导体器件的支撑框架和安装在支撑框架上并位于半导体器件上方的防尘板。 当半导体器件支撑载体从处理液体中拉出时，处理液中的灰尘被防尘板推到半导体器件外面。

公开(公告)号：US5552628A

公开(公告)日：1996-09-03

申请号：US389563

申请日：1995-02-16

申请人： Tohru Watanabe ,  Katsuya Okumura

发明人： Tohru Watanabe ,  Katsuya Okumura

IPC分类号： H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/58 ,  H01L23/48

CPC分类号： H01L23/53271 ,  H01L21/316 ,  H01L21/76819 ,  H01L23/5329 ,  H01L2924/0002

摘要： A semiconductor device of the present invention comprises a silicon substrate, a silicon oxide layer formed on the silicon substrate, first aluminum wires formed on the silicon oxide layer, a CVD SiO.sub.2 layer covering at least the first aluminum wires, and an inorganic oxide precipitated from a liquid-phase material, the inorganic oxide filling at least a gap between the first aluminum wires.

摘要翻译： 本发明的半导体器件包括硅衬底，形成在硅衬底上的氧化硅层，形成在氧化硅层上的第一铝线，至少覆盖第一铝线的CVD SiO 2层和从 液相材料，无机氧化物至少填充第一铝线之间的间隙。

公开(公告)号：US5302548A

公开(公告)日：1994-04-12

申请号：US819051

申请日：1992-01-10

申请人： Tohru Watanabe ,  Katsuya Okumura

发明人： Tohru Watanabe ,  Katsuya Okumura

IPC分类号： H01L21/31 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/441 ,  H01L21/324

CPC分类号： H01L23/5328 ,  H01L21/312 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76829 ,  H01L2924/0002 ,  H01L2924/12044

摘要： A semiconductor device includes at least one wiring layer containing aluminum as the major constituent and provided through an insulating film on a semiconductor substrate on which components or elements are formed, and a heat resistant high molecular organic film having a radical of small water absorbing property provided on side surfaces of the wiring layer. The heat resisting high molecular organic film is preferably formed of polyphenylene sulfide. A method of the semiconductor device includes the steps of forming components on a semiconductor substrate, forming an insulating film on the components to form an aluminum wiring layer by deposition and patterning, depositing a heat resistant high molecular organic film having a radical of small water absorbing property, and heating the heat resistant high molecular organic film at a temperature to fluidify to and flatten the heat resistant high molecular organic film. An inorganic layer is deposited as a protective layer.

摘要翻译： 半导体器件包括至少一个布线层，该布线层含有铝作为主要成分，并且通过在其上形成有元件或元件的半导体衬底上的绝缘膜提供，并且提供具有小吸水性基团的耐热高分子有机膜 在布线层的侧表面上。 耐热性高分子有机膜优选由聚苯硫醚形成。 半导体器件的方法包括以下步骤：在半导体衬底上形成元件，在元件上形成绝缘膜，通过沉积和图案化形成铝布线层，沉积具有吸水率小的自由基的耐热高分子有机膜 性质，并在耐热高分子有机膜的温度下加热以使流化并平坦化耐热性高分子有机膜。 沉积无机层作为保护层。

公开(公告)号：US5032491A

公开(公告)日：1991-07-16

申请号：US234725

申请日：1988-08-22

申请人： Katsuya Okumura ,  Tohru Watanabe

发明人： Katsuya Okumura ,  Tohru Watanabe

IPC分类号： H01L21/302 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

CPC分类号： H01L21/0271 ,  H01L21/31138

摘要： A photoresist is coated on a substrate to form a planar surface, thus to form a recessed portions corresponding to a mask of a pattern to be formed in the photoresist layer having planar surface. SiO.sub.2 etc. are deposited into the recessed portions to prepare a mask, thus to form a fine pattern by anisotropic etching. As a result, by films remaining below the recessed portions formed in the photoresist layer having planar surface, a fine pattern is formed.