发明授权
- 专利标题: Method of fabricating SOI substrate with uniform thin silicon film
- 专利标题(中): 用均匀的薄膜制造SOI衬底的方法
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申请号: US841166申请日: 1992-02-25
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公开(公告)号: US5240883A公开(公告)日: 1993-08-31
- 发明人: Takao Abe , Masatake Katayama , Akio Kanai , Konomu Ohki , Masatake Nakano
- 申请人: Takao Abe , Masatake Katayama , Akio Kanai , Konomu Ohki , Masatake Nakano
- 申请人地址: JPX Tokyo
- 专利权人: Shin-Etsu Handotai Co., Ltd.
- 当前专利权人: Shin-Etsu Handotai Co., Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX3-358935 19911227
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; H01L21/20 ; H01L21/304 ; H01L21/3063 ; H01L21/762 ; H01L27/12
摘要:
A thin Silicon film On Insulator (SOI) material fabricating method which is capable of providing a very high thickness uniformity of the silicon film, a process simplification and a considerable reduction of processing cost is disclosed, in which a silicon oxide film is formed on one or both of a p-type silicon bond wafer and a silicon base wafer, then the two wafers are bonded together through the silicon oxide film, subsequently a fixed positive charge is induced in the silicon oxide film to form a n-type inversion layer in the p-type silicon bond wafer adjacent to an interface between the p-type silicon bond wafer and the silicon oxide film layer, and thereafter a chemical etching is effected while applying a positive voltage to the p-type silicon bond wafer so that an etch-stop is made at an interface between a depletion layer including the n-type inversion layer and the p-type layer.