发明授权
- 专利标题: Semiconductor device with overvoltage protective function
- 专利标题(中): 半导体器件具有过压保护功能
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申请号: US899123申请日: 1992-06-18
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公开(公告)号: US5243205A公开(公告)日: 1993-09-07
- 发明人: Mitsuhiko Kitagawa , Tetsujiro Tsunoda , Akihiko Osawa
- 申请人: Mitsuhiko Kitagawa , Tetsujiro Tsunoda , Akihiko Osawa
- 申请人地址: JPX Kawasaki
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX1-268783 19891016
- 主分类号: H01L21/263
- IPC分类号: H01L21/263 ; H01L29/32 ; H01L29/739 ; H01L29/74 ; H01L29/78 ; H01L31/111
摘要:
In a photothyristor, a main thyristor consisting of a P emitter layer, an N base layer, a P gate base layer and an N emitter layer is formed on a semiconductor substrate. Also a pilot thyristor surrounded with the main thyristor and consisting of a P emitter layer, an N base layer, a P gate base layer and an N emitter layer is formed. In the P gate base layer, a trigger light irradiation surface including the inner surface of a recess is formed on the center of the pilot thyristor. In the N base layer, a crystal defect layer is formed under the trigger light irradiation surface by the irradiation with a radiant ray. A breakdown voltage to protect the thyristor from overvoltage is controlled by the crystal defect layer.
公开/授权文献
- USD290902S Shoe sole 公开/授权日:1987-07-21
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