发明授权
US5243205A Semiconductor device with overvoltage protective function 失效
半导体器件具有过压保护功能

Semiconductor device with overvoltage protective function
摘要:
In a photothyristor, a main thyristor consisting of a P emitter layer, an N base layer, a P gate base layer and an N emitter layer is formed on a semiconductor substrate. Also a pilot thyristor surrounded with the main thyristor and consisting of a P emitter layer, an N base layer, a P gate base layer and an N emitter layer is formed. In the P gate base layer, a trigger light irradiation surface including the inner surface of a recess is formed on the center of the pilot thyristor. In the N base layer, a crystal defect layer is formed under the trigger light irradiation surface by the irradiation with a radiant ray. A breakdown voltage to protect the thyristor from overvoltage is controlled by the crystal defect layer.
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