发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US739333申请日： 1991-08-01
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公开(公告)号： US5247191A公开(公告)日： 1993-09-21
- 发明人: Shunpei Yamazaki , Akira Mase
- 申请人： Shunpei Yamazaki , Akira Mase
- 申请人地址： JPX Kanagawa
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JPX Kanagawa
- 优先权： JPX2-205392 19900802
- 主分类号： G02F1/136
- IPC分类号： G02F1/136 ; G02F1/1362 ; G02F1/1368 ; H01L21/3205 ; H01L21/74 ; H01L21/768 ; H01L23/48 ; H01L23/52 ; H01L23/522 ; H01L27/12 ; H01L29/78 ; H01L29/786
摘要：
A semiconductor device. A depression is formed in an insulating portion of a substrate and an electric lead is formed in the depression so that at least a portion of the electric lead is buried in the substrate. A semiconductor device is formed on the substrate and connected to the electric lead. The electric lead may be an extension of a source electrode, a drain electrode, or a gate electrode of the semiconductor device. Also, a gate electrode, a source electrode, or a drain electrode may be buried in a substrate.
公开/授权文献
- US4706109A Television transmission system 公开/授权日：1987-11-10
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