发明授权
- 专利标题： Heterojunction bipolar transistor structure having low base-collector capacitance, and method of fabricating the same
- 专利标题（中）： 具有低基极集电极电容的异质结双极晶体管结构及其制造方法
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申请号： US6189申请日： 1993-01-19
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公开(公告)号： US5252841A公开(公告)日： 1993-10-12
- 发明人: Cheng P. Wen , Chan S. Wu , Peter Chu
- 申请人： Cheng P. Wen , Chan S. Wu , Peter Chu
- 申请人地址： CA Los Angeles
- 专利权人： Hughes Aircraft Company
- 当前专利权人： Hughes Aircraft Company
- 当前专利权人地址： CA Los Angeles
- 主分类号： H01L21/331
- IPC分类号： H01L21/331 ; H01L29/737 ; H01L29/161 ; H01L29/205 ; H01L29/72
摘要：
The base-collector capacitance in a heterojunction bipolar transistor (HBT) (50) is reduced, thereby providing increased cutoff frequency and power gain, by eliminating a portion of a collector contact layer (54) which normally underlies a base electrode (66). A similar effect may be produced by forming the collector contact layer (54) such that it initially extends into the area (54c) under the base electrode (66), and subsequently rendering the collector contact layer (54) in this area (54c) semiinsulative by proton bombardment. A ballast resistor layer (70) is formed between an emitter layer (62) and an overlying emitter electrode (68) to prevent thermal runaway and hot spot formation. A plurality of the HBTs (50) may be arranged in a distributed amplifier configuration (80) including contact electrode bus lines (84,88) having a geometry designed to provide high thermal efficiency, and input and output circuit matching characteristics.
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