发明授权
US5264395A Thin SOI layer for fully depleted field effect transistors 失效
薄SOI层用于完全耗尽的场效应晶体管

Thin SOI layer for fully depleted field effect transistors
摘要:
A method of forming a SOI integrated circuit includes defining thin silicon mesas by etching a device layer down to the underlying insulator, forming a nitride bottom polish stop in the bottom of the apertures by a low temperature PECVD process, with nitride sidewalls on the silicon mesas being susceptible to easy removal, so that no hard material is present during a chemical-mechanical polishing step to thin the device layer down to less than 1000.ANG., and filling the apertures with a temporary layer of polysilicon to provide mechanical support to the edges of the device layer during the polishing operation.
公开/授权文献
信息查询
0/0