发明授权
- 专利标题: Thin SOI layer for fully depleted field effect transistors
- 专利标题(中): 薄SOI层用于完全耗尽的场效应晶体管
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申请号: US991221申请日: 1992-12-16
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公开(公告)号: US5264395A公开(公告)日: 1993-11-23
- 发明人: Ahmet Bindal , Carol Galli , Nivo Rovedo
- 申请人: Ahmet Bindal , Carol Galli , Nivo Rovedo
- 申请人地址: NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: NY Armonk
- 主分类号: H01L21/304
- IPC分类号: H01L21/304 ; H01L21/306 ; H01L21/321 ; H01L21/76 ; H01L21/762 ; H01L27/12 ; H01L21/465
摘要:
A method of forming a SOI integrated circuit includes defining thin silicon mesas by etching a device layer down to the underlying insulator, forming a nitride bottom polish stop in the bottom of the apertures by a low temperature PECVD process, with nitride sidewalls on the silicon mesas being susceptible to easy removal, so that no hard material is present during a chemical-mechanical polishing step to thin the device layer down to less than 1000.ANG., and filling the apertures with a temporary layer of polysilicon to provide mechanical support to the edges of the device layer during the polishing operation.
公开/授权文献
- US6013598A Selective hydrodesulfurization catalyst 公开/授权日:2000-01-11
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