发明授权
- 专利标题: Process for manufacturing three dimensional IC's
- 专利标题(中): 三维IC制造工艺
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申请号: US954032申请日: 1992-09-30
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公开(公告)号: US5266511A公开(公告)日: 1993-11-30
- 发明人: Yoshihiro Takao
- 申请人: Yoshihiro Takao
- 申请人地址: JPX Kawasaki
- 专利权人: Fujitsu Limited
- 当前专利权人: Fujitsu Limited
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX3-255019 19911002
- 主分类号: H01L21/304
- IPC分类号: H01L21/304 ; H01L21/762 ; H01L21/764 ; H01L21/822 ; H01L21/98 ; H01L23/544 ; H01L21/72
摘要:
A first semiconductor substrate comprises an integrated circuit formed therein and an alignment mark formed thereon. The top surface of the first semiconductor substrate is covered with a first insulating layer and is planarized. The alignment mark is formed in a space between a plurality of groups of elements, such as a scribe line area. A second semiconductor substrate is provided with a groove corresponding to said space, or scribe line area, and a second insulating layer is formed on thereon and so as to bury the groove, and the exposed surface of the second insulating layer is planarized. The two planarized surfaces of the first and second semiconductor substrates are positioned in facing, contiguous relationship and are bonded to each other, while an infra-red microscope is used for alignment of the space and the groove. The back surface of the second semiconductor substrate is selectively etched until the second insulating layer, as filed in the groove, is exposed. A second integrated circuit is formed in the second semiconductor substrate at a position therein determined by detecting the alignment mark on the first semiconductor substrate through a visible ray microscope.
公开/授权文献
- US4190324A Achromatic objective lens 公开/授权日:1980-02-26
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