发明授权
- 专利标题: Safe method for etching silicon dioxide
- 专利标题(中): 蚀刻二氧化硅的安全方法
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申请号: US895493申请日: 1992-06-08
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公开(公告)号: US5268069A公开(公告)日: 1993-12-07
- 发明人: Jonathan D. Chapple-Sokol , Richard A. Conti , David E. Kotecki , Andrew H. Simon , Manu Tejwani
- 申请人: Jonathan D. Chapple-Sokol , Richard A. Conti , David E. Kotecki , Andrew H. Simon , Manu Tejwani
- 申请人地址: NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: NY Armonk
- 主分类号: H01L21/306
- IPC分类号: H01L21/306 ; H01L21/311 ; H01L21/00
摘要:
Anhydrous ammonium fluoride is used as a safe source of hydrogen fluoride for etching native or other silicon dioxide layers from silicon substrates. Heating the anhydrous ammonium fluoride above its sublimation temperature results in the generation of hydrogen fluoride gas which etches the silicon dioxide. Controlled amounts of water vapor are used during the etch reaction to ensure complete etching of the thin oxide layers down to within hundredths of a monolayer and to achieve precise etch rate control.